A performance evaluation of a novel field-effect device as an alternative to the field-effect diode

Khorsand, Vahid; Yousefi, Reza; Afzalian, Amard

doi:10.1007/s10825-023-02027-7

Cited by 1 publication

(1 citation statement)

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“…These key features have made the FED a promising structure. However, FED cannot be turned OFF properly in channel lengths of less than 100 nm [19,38]. To tackle this problem, modified versions of FED (M-FED) were proposed in which the insertion of two oppositely doped layers underneath the source and drain areas so-called reservoirs leads the device to be turned OFF effectively [Fig.…”

Section: Introductionmentioning

confidence: 99%

Performance and Geometry Study of Silicon Nanowire-based Field Effect Diodes (FED)

GolshanBafghi,

Rezaei,

Ghafouri

et al. 2023

JCHAR

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Nanostructured solid-state devices demonstrate prominent electronic transport properties and thus represent powerful building blocks for a wide range of analog and digital integrated circuits and systems. In this study, the integration of the side-contacted field effect diode (S-FED) with the silicon nanowire concept is pursued to create a device that maintains a substantial aspect ratio while delivering suitable execution. The nanowire side-contacted FED (NW-SFED), referred to as this apparatus, exhibits the capability to achieve an exceptionally high ON/OFF current ratio of 4×10 8 , allowing for efficient switching between ON and OFF states. While the downscaling of the planar CMOS technology has faced severe constraints, this characteristic is featured as a figure of merit for the NW-SFED device. Accordingly, the device can also be used in a coordinated device-circuit co-design framework as a promising candidate to mitigate noise, delay, and energy. Herein, a quantitative evaluation of NW-SFED's performance is conducted utilizing a semiconductor drift-diffusion solver to explore how variations in channel length, device width, as well as the dimensions of the n + and p + doped regions in the source and drain, respectively, influence its operational characteristics. The impact of the channel length, spacer length and device width on NW-SFED fabrication turned out to be negligible. In contrast, the thickness of doped regions emerged as the critical parameter in the fabrication process.

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Section: Introductionmentioning

confidence: 99%