A phase noise analysis of CMOS colpitts oscillators

Wang, Xiaoyan; Andreani, Pietro

doi:10.1109/norchp.2004.1423845

Cited by 3 publications

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Phase Noise Analysis of Colpitts and Hartley CMOS Oscillators

Voicu¹,

Pepe²,

Zito³

2013

24th IET Irish Signals and Systems Conference (ISSC 2013)

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̶ This paper reports comparative analyses of the phase noise predictions through Cadence simulations for two LC oscillator topologies: Colpitts and Hartley oscillators. The oscillators have been designed and phase noise performance have been derived by means of both direct Cadence-SpectreRF simulations and the Impulse Sensitivity Function (ISF). All the simulation steps for deriving the ISF have been discussed in detail. The ISF has been evaluated for a wide range of amplitudes of the injected current pulse and compared with simulation results obtained directly by Cadence-SpectreRF simulations. The comparative analyses carried out for a set of different injected pulse amplitudes show that the ISF provides accurate predictions across the entire amplitude range and that the phase noise performance of Colpitts are superior to Hartley oscillator.

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Phase Noise Analysis of Colpitts and Hartley CMOS Oscillators

Voicu¹,

Pepe²,

Zito³

2013

24th IET Irish Signals and Systems Conference (ISSC 2013)

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A time-variant analysis of the 1/f/sup 2/ phase noise in CMOS parallel LC-tank quadrature oscillators

Andreani

2006

IEEE Trans. Circuits Syst. I

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Abstract-This paper presents a study of 1 2 phase noise in quadrature oscillators built by connecting two differential LC-tank oscillators in a parallel fashion. The analysis clearly demonstrates the necessity of adopting a time-variant theory of phase noise, where a more simplistic, time-invariant approach fails to explain numerical simulation results even at the qualitative level. Two topologies of 5-GHz parallel quadrature oscillators are considered, and compact but nevertheless highly general, closed-form formulas are derived for the phase noise caused by the losses in the LC-tanks and by the noisy currents in the MOS transistors. A large number of spectreRF simulations, covering a wide range of working conditions for the oscillators, is used to validate the theoretical analysis.

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