Journal of Applied Physics
 1996
DOI: 10.1063/1.363532
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A phenomenological theory of ion-beam synthesis of ternary compound in silicon

M. Yu. Barabanenkov
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Abstract: Hightemperature annealings of Sb and Sb/B heavily implanted silicon wafers studied by near grazing incidence fluorescence extended xray absorption fine structure Effect of annealing temperature on optical and structural properties of ionbeamsynthesized semiconducting FeSi2 layers

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