A photon source based on the quantum well/dot structure in a microcavity

Abstract

A scheme for the photon generation induced by the electron optical transition in a semiconductor structure consisting of a quantum dot and two quantum wells is proposed. A nanobeam photonic crystal microcavity is used as a source of the driving field and for concentrating the electromagnetic energy emitted during the cascade transport of electrons. We calculate the population dependences of the electron and microcavity Fock states as well as the average number of photons (a radiation power) on time, a mode decay rate and electron tunneling rates between the quantum dot and metal contacts. The generation power is shown to be root-dependent on the tunneling rates, and the maximum generation power is limited by the photon dissipation rate.