A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon

Abstract

A physically motivated model that accounts for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted Si is presented. For the calibration of the model, a genetic algorithm is used to find the optimum set of physical parameters from experimental data. Mean-size evolution of {113} defects obtained by transmission electron microscopy and self-interstitial oversaturation results measured in the vicinity of extended defects are combined in the same fitting procedure. The calibration of parameters shows that binding energies of small self-interstitial clusters exhibit strong maxima, as reported in other investigations. Results of the calibrated model are compared to experimental data obtained in complementary investigations. It is demonstrated that the model is able to predict a wide variety of physical phenomena, from the oversaturation of self-interstitials via the mean-size evolution of {113} defects to the depth distribution of the density of the latter

Silicon as an emissive optical medium

“…Still, it is worth discussing briefly a particular extended defect known as the {311} defect. {311} defects have been studied in much detail [15,[62][63][64][65]. They are rod-shaped accumulations of Si i s in {311} planes of the Si lattice (see Fig.…”

Cascade damage evolution: rate theory versus kinetic Monte Carlo simulations

“…Within this approach based on the mean-field approximation, the diffusion and nucleation/growth of defects is modelled through a set of diffusion-reaction rate equations. Different research teams [11,14,18,23,26] have used this approach to study the nucleation and growth of defects in various materials over the years. Recently, Rottler et al [20] used the RT formalism to investigate point defect dynamics in metals and showed that, when defects are homogeneously distributed, kMC and RT models are in near perfect agreement.…”

On the origin of dislocation loops in irradiated materials: A point of view from silicon

“…Indeed, the same two types of dislocation loops were found in silicon after ''irradiation", actually ion implantation, and it took us a while and lots of experiments to understand then model the formation and thermal evolution of these defects. Today, it is understood and physically based models exist, either analytical or based on Monte Carlo methods, which have been implemented in academic and commercial codes aimed at predicting the effect of processes in semiconductors [2][3][4][5].…”