A physics based analytical model for buried p-layer non-self aligned SiC MESFET for the saturation region

Aggarwal, Sandeep Kr; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

doi:10.1016/j.sse.2005.04.002

Cited by 6 publications

(5 citation statements)

References 13 publications

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“…(20) has three parts and the first part of this expression can be evaluated by involving Eq. (14), which gives…”

Section: Saturation Regionmentioning

confidence: 92%

“…Eq. (14) shows that the charge accumulation in Region-II is dependent upon the device physical parameters such as (W L g /a) as well as on the device bias potentials, which control u 0 and u 1 .…”

Section: For Region-iimentioning

confidence: 99%

“…Incorporating quarter circle assumption of potential at the source and at the drain side, C GS and C GD were found. In 2005, Aggarwal et al [14] presented a capacitor model for SiC MESFETs.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

An improved space charge distribution analytical model to assess field-effecttransistor’s intrinsic capacitors

Rehman¹,

Ahmed²,

Ahmed³

et al. 2019

Turk J Elec Eng & Comp Sci

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In this paper, an analytical model has been developed for improved assessment of Miller capacitors for highfrequency metal-semiconductor field-effect transistors. Depletion layer underneath the Schottky barrier gate has been divided into four distinct regions, and by evaluating the charges associated with each region, gate-to-source ( CGS ) and gate-to-drain ( CGD ) capacitors, commonly known as Miller capacitors, have been defined accordingly. Mathematical expressions have been developed both for the linear as well as for the saturation region. Miller capacitors and their variation as a function of applied bias have been assessed. It has been shown that the proposed technique offers better accuracy in determining the Miller capacitors, especially CGD of the device relative to other reported analytical capacitor models. This improved accuracy has been achieved by involving the entire Schottky barrier depletion layer piecewise for the assessment of charges defining the Miller capacitors. Thus, the developed technique could be a useful tool in assessing the AC response of the device with more precision.

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“…(20) has three parts and the first part of this expression can be evaluated by involving Eq. (14), which gives…”

Section: Saturation Regionmentioning

confidence: 92%

Section: For Region-iimentioning

confidence: 99%

See 1 more Smart Citation

An improved space charge distribution analytical model to assess field-effecttransistor’s intrinsic capacitors

Rehman¹,

Ahmed²,

Ahmed³

et al. 2019

Turk J Elec Eng & Comp Sci

View full text Add to dashboard Cite

show abstract

“…[10][11][12] Accordingly, various researchers have investigated the influence of the device parameters, e.g., the surface state, the parasitic capacitance, the photocurrent, the trans-conductance, the channel depletion, and so forth, on the performance of a variety of MESFET devices. [13][14][15][16][17][18][19][20][21][22][23][24][25] The characteristic curves of a FET device are generally constructed by increasing the DC voltage and recording the corresponding output current. However, the results provide no clues as to the effect of the interference frequency on the device response.…”

Section: Introductionmentioning

confidence: 99%

Investigations of Surface State and 1/f^r Noise Characteristics of InGaAs Metal–Semiconductor Field-Effect Transistors

Tsai¹,

Wang²

2009

jjap

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This paper develops a comprehensive set of theoretical equations to simulate the 1=f noise spectrum and volt-ampere (I-V ) characteristic curve of an n-type InGaAs metal-semiconductor field-effect transistor (MESFET) device. Two methods are proposed for establishing the corner frequency of the noise spectrum. The correlation between the surface state, noise spectrum, gate bias, drain bias, corner frequency and threshold voltage of the MESFET device is established based on simulation and experimental data. The good agreement observed between the simulation and experimental results confirms the validity of the theoretical predictions for the noise spectrum and I-V characteristic curve of the current MESFET device.

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“…The table-based model [9,10] has the advantage of rapid and accurate implement, but has the limitation of interpolation function and the scope of parameter extraction, and also requires enough measured data to obtain high accuracy. The analytical model [11][12][13][14][15] and numerical model [16] are widely used to investigate the device operational principle and to evaluate the device performance, but its accuracy is restricted and cannot be usually embedded into CAD tools directly. Manohar [17] and Ahmed [18] have developed 4H-SiC MESFET empirical large signal I-V model to design the power amplifier.…”

Section: Introductionmentioning

confidence: 99%

Improved empirical DC I–V model for 4H-SiC MESFETs

Cao

Zhang

et al. 2008

Sci. China Ser. F-Inf. Sci.

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A novel empirical large signal direct current (DC) I-V model is presented considering the high saturation voltage, high pinch-off voltage, and wide operational range of drain voltage for 4H-SiC MESFETs. A comparison of the presented model with Statz, Materka, Curtice-Cubic, and recently reported 4H-SiC MESFET large signal I-V models is made through the Levenberg-Marquardt method for fitting in nonlinear regression. The results show that the new model has the advantages of high accuracy, easily making initial value and robustness over other models. The more accurate results are obtained by the improved channel modulation and saturation voltage coefficient when the device is operated in the sub-threshold and near pinch-off region. In addition the new model can be implemented to CAD tools directly, using for design of 4H-SiC MESFET based RF&MW circuit, particularly MMIC (microwave monolithic integrate circuit). 4H-SiC MESFET, DC I-V characteristics, empirical model, Levenberg-Marquardt method, nonlinear regression

show abstract

A physics based analytical model for buried p-layer non-self aligned SiC MESFET for the saturation region

Cited by 6 publications

References 13 publications

An improved space charge distribution analytical model to assess field-effecttransistor’s intrinsic capacitors

An improved space charge distribution analytical model to assess field-effecttransistor’s intrinsic capacitors

Investigations of Surface State and 1/f^r Noise Characteristics of InGaAs Metal–Semiconductor Field-Effect Transistors

Improved empirical DC I–V model for 4H-SiC MESFETs

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A physics based analytical model for buried p-layer non-self aligned SiC MESFET for the saturation region

Cited by 6 publications

References 13 publications

An improved space charge distribution analytical model to assess field-effecttransistor’s intrinsic capacitors

An improved space charge distribution analytical model to assess field-effecttransistor’s intrinsic capacitors

Investigations of Surface State and 1/fr Noise Characteristics of InGaAs Metal–Semiconductor Field-Effect Transistors

Improved empirical DC I–V model for 4H-SiC MESFETs

Contact Info

Product

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Investigations of Surface State and 1/f^r Noise Characteristics of InGaAs Metal–Semiconductor Field-Effect Transistors