A Physics-Based Dynamic Compact Model of Ferroelectric Tunnel Junctions

Feng, Ning; Li, Hao; Zhang, Lining; Ji, Vincent; Zhang, Fangxing; Zhu, Xiaobao; Shang, Zongwei; Cai, Puyang; Li, Ming; Wang, Runsheng; Huang, Ru

doi:10.1109/led.2022.3233456

Cited by 4 publications

(2 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2a). We also find that a higher reset voltage than set voltage is needed, because of the extra depletion region formed at the BSO/NSTO interface during the reset process, which will divide a portion of the total voltage, as reported previously 13,19 . Furthermore, for FTJs with 4.6-nm-thick BSO, the TER is 10 8 with −6 V reset volage (Supplementary Fig.…”

Section: Giant Ter Of Bso-based Ftjssupporting

confidence: 75%

“…Ferroelectric tunnel junctions (FTJs) with ultra-thin ferroelectric films have attracted much attention as two-terminal resistive switching devices due to the small cell size, non-destructive readout, and scalability towards large-scale arrays [6][7][8][9][10][11] . The ferroelectric thin film allows the quantum mechanical tunneling of electrons, with the average tunneling barrier and thus the tunneling electroresistance (TER) modulated by the polarization of the ferroelectric layer [12][13][14] . A high TER can increase the reliability and decrease the energy consumption in FTJ devices and arrays 9,15 , and the barrier height or width modulation has been proven to improve the TER value 16 .…”

mentioning

confidence: 99%

See 1 more Smart Citation

Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions

Jia,

Yang,

Fang

et al. 2024

Nat Commun

View full text Add to dashboard Cite

Ferroelectric tunnel junctions are promising towards high-reliability and low-power non-volatile memories and computing devices. Yet it is challenging to maintain a high tunnelling electroresistance when the ferroelectric layer is thinned down towards atomic scale because of the ferroelectric structural instability and large depolarization field. Here we report ferroelectric tunnel junctions based on samarium-substituted layered bismuth oxide, which can maintain tunnelling electroresistance of 7 × 105 with the samarium-substituted bismuth oxide film down to one nanometer, three orders of magnitude higher than previous reports with such thickness, owing to efficient barrier modulation by the large ferroelectric polarization. These ferroelectric tunnel junctions demonstrate up to 32 resistance states without any write-verify technique, high endurance (over 5 × 109), high linearity of conductance modulation, and long retention time (10 years). Furthermore, tunnelling electroresistance over 109 is achieved in ferroelectric tunnel junctions with 4.6-nanometer samarium-substituted bismuth oxide layer, which is higher than commercial flash memories. The results show high potential towards multi-level and reliable non-volatile memories.

show abstract

Section: Giant Ter Of Bso-based Ftjssupporting

confidence: 75%