A physics-based model of DC and microwave characteristics of GaN/AlGaN HEMTs

Sippel, Jonathan C.; Islam, S.S.; Mukherjee, Sankha

doi:10.1002/mmce.20219

Cited by 8 publications

(10 citation statements)

References 16 publications

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“…A high saturation current of 502.6mA/mm at a gate bias of 1V is achieved. The calculated results are in good agreement with the simulated results [19]. …”

Section: Resultssupporting

confidence: 80%

See 1 more Smart Citation

Microwave Analysis for Intrinsic and Extrinsic Characteristics of AlGaN/GaN pHEMT

Ramnish¹,

Arya²,

Ahlawat³

2014

IJAST

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“…A high saturation current of 502.6mA/mm at a gate bias of 1V is achieved. The calculated results are in good agreement with the simulated results [19]. …”

Section: Resultssupporting

confidence: 80%

“…The discrepancy observed at higher gate voltages. The analytical results are in close proximity with the previous published results [19].…”

Section: Figure 4 Dependence Of Drain Current On Gate Voltagessupporting

confidence: 81%

Microwave Analysis for Intrinsic and Extrinsic Characteristics of AlGaN/GaN pHEMT

Ramnish¹,

Arya²,

Ahlawat³

2014

IJAST

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“…The short circuit current‐gain ( h 21 ) represents an important figure of merit for evaluating the performance for microwave field effect transistors. As a matter of fact, this parameter is conventionally exploited for determining the unity current‐gain cut‐off frequency ( f T ), which is used for roughly estimating the upper frequency limit of the device operation [1–6]. The parameter h 21 should roll off with a slope of −20 dB/dec; nevertheless, deviations from this ideal behavior can be observed, especially at high frequencies.…”

Section: Introductionmentioning

confidence: 99%

A clear‐cut understanding of the current‐gain peak in HEMTs: Theory and experiments

Crupi

Raffo

Schreurs

et al. 2012

Micro & Optical Tech Letters

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The aim of this article is to provide a clear‐cut understanding of the origin of the current‐gain peak (CGP) affecting the microwave behavior of high electron mobility transistors (HEMTs). This effect consists of a sudden increase of the magnitude of the short circuit current‐gain at a given value of the frequency. The present study demonstrates that the CGP can be attributed to the resonance associated to the transition from a capacitive to an inductive behavior of the open circuit output impedance, as confirmed through an extensive experimental analysis. In particular, the CGP is analyzed in HEMT devices based on both GaAs and GaN technologies and its appearance is investigated with respect to the gate width, bias condition, and ambient temperature. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2801–2806, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27192

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“…7,8,11,13,18,[40][41][42][43][44][45][46][47][48][49] The main advantage of an ANN-based FET model is that, because of the "black-box" nature of ANN models, the S-parameters can be straightforwardly and accurately reproduced without requiring the extraction of an equivalent-circuit model [50][51][52][53][54][55][56][57][58][59][60][61][62][63][64][65][66][67][68] or a detailed knowledge of the FET physics. [69][70][71][72][73] As a matter of fact, by exploiting ANNs, it is possible mathematically describe the observable inputoutput relationships. Nevertheless, it can be quite challenging to determine the most appropriate ANN model for the specific case study, depending on the FET technology and operating conditions.…”

Section: Introductionmentioning

confidence: 99%

A review on the artificial neural network applications for small‐signal modeling of microwave FETs

Marinković

Crupi

Caddemi

et al. 2019

Int J Numerical Modelling

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The purpose of this paper is to provide a comprehensive overview of the fieldeffect transistor (FET) small-signal modeling using artificial neural networks (ANNs). To gain an in-depth insight into how to effectively develop an ANN model, we present a comparative study on the application of the ANNs for modeling the scattering (S-) parameters of a variety of FET technologies versus bias point, ambient temperature, and geometrical dimensions. As will be shown, the main challenge consists of identifying the most appropriate ANN model for the specific case under study. This is because the performance of an ANN-based model can vary significantly, depending especially on the choice of the model structure and the size and parameters of the chosen ANN. In addition, the choice of the model is related directly to the behavior of the FET characteristics, which might greatly depend on the selected device technology and operating conditions. The analysis of the present comparative study allows understanding how to properly construct ANN models to perform at their best for a successful FET modeling.

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A physics-based model of DC and microwave characteristics of GaN/AlGaN HEMTs

Cited by 8 publications

References 16 publications

Microwave Analysis for Intrinsic and Extrinsic Characteristics of AlGaN/GaN pHEMT

Microwave Analysis for Intrinsic and Extrinsic Characteristics of AlGaN/GaN pHEMT

A clear‐cut understanding of the current‐gain peak in HEMTs: Theory and experiments

A review on the artificial neural network applications for small‐signal modeling of microwave FETs

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