A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT

Das, Basab; Goswami, Rupam; Bhowmick, Brinda

doi:10.1007/s12043-015-1100-y

Cited by 4 publications

(1 citation statement)

References 23 publications

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“…Here, for the embedded passivation structure, the electric field between the gate and the drain can be expressed as follows [20]:…”

Section: Resultsmentioning

confidence: 99%

TCAD study of high breakdown voltage AlGaN/GaN HEMTs with embedded passivation layer

Fan

et al. 2022

J. Phys. D: Appl. Phys.

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The breakdown characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) are one of the most important parameters for practical applications when used as power devices. In this study, the relationship between the relative permittivity of the passivation layers and the breakdown voltages in the off state was investigated in detail using TCAD simulations. An embedded double-passivation layer was proposed to enhance the breakdown voltage of the devices. This device structure was realized using an additional step of etching and opening holes on the edge of the gate metal, followed by the deposition of the embedded passivation films. The extracted electric field shows that this embedded passivation layer not only can improve the breakdown characteristics of the device like using a single high k passivation film but also presents as the function of the “Metal Field Plate”, additionally resulting in the enlarged breakdown voltage. Further theoretical simulations indicated that the greater the difference between the dielectric constants of the high/low passivation materials, the higher the breakdown voltage can be obtained.

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“…Here, for the embedded passivation structure, the electric field between the gate and the drain can be expressed as follows [20]:…”

Section: Resultsmentioning

confidence: 99%

TCAD study of high breakdown voltage AlGaN/GaN HEMTs with embedded passivation layer

Fan

et al. 2022

J. Phys. D: Appl. Phys.

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show abstract

Electrical features in $$\hbox {AlGaN}/\hbox {GaN}$$ AlGaN / GaN high electron mobility transistors with recessed gate and undoped region in the barrier

2019

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Potential and electric field analysis of field plated AlGaN/GaN HEMT for high voltage applications using 2-D analytical approach

Chugh

Haldar

Bhattacharya

et al. 2023

Microelectronics Journal

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A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT

Cited by 4 publications

References 23 publications

TCAD study of high breakdown voltage AlGaN/GaN HEMTs with embedded passivation layer

TCAD study of high breakdown voltage AlGaN/GaN HEMTs with embedded passivation layer

Electrical features in $$\hbox {AlGaN}/\hbox {GaN}$$ AlGaN / GaN high electron mobility transistors with recessed gate and undoped region in the barrier

Potential and electric field analysis of field plated AlGaN/GaN HEMT for high voltage applications using 2-D analytical approach

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