A Piezo-Capacitive High-Frequency Resonant Accelerometer

Mansoorzare, Hakhamanesh; Todi, Ankesh; Moradian, Siamak; Abdolvand, Reza

doi:10.1109/ius46767.2020.9251353

Cited by 8 publications

(7 citation statements)

References 13 publications

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“…The small signal equivalent circuit components—motional resistance (

R_{\text{m}}

), capacitance (

C_{\text{m}}

), and inductance (

L_{\text{m}}

)—have been derived in previous work. [ 40 ] Specific to this research, the analytical solution of

R_{\text{m}}

for a two‐port piezoelectrically transduced resonator built on a substrate operating in the fundamental WEM is given by

R_{\text{m}} = \frac{\pi}{4} \frac{T}{L} \frac{\sqrt{E_{\text{eff}} \left(\rho\right)_{\text{eff}}}}{Q E_{\text{iezo}}^{2} d_{31}^{2}}

where T is the total thickness of the resonator, L is its length, and

d_{31}

is the transverse piezoelectric coefficient. [ 69 ]

E_{\text{piezo}}

and

\left(\rho\right)_{\text{piezo}}

are Young's modulus and the effective mass density of the piezoelectric layer, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…[21,46] The small signal equivalent circuit components-motional resistance (R m ), capacitance (C m ), and inductance (L m )-have been derived in previous work. [40] Specific to this research, the analytical solution of R m for a two-port piezoelectrically transduced resonator built on a substrate operating in the fundamental WEM is given by…”

Section: Introductionmentioning

confidence: 99%

“…utilizing piezoelectric transduction, known as piezo-MEMS resonators, find extensive utility in inertial sensing, radio frequency (RF) signal processing, and environmental monitoring applications. [35][36][37][38][39][40][41][42][43][44][45][46][47] They serve as filters, sensors, and clock generators, [48] offering high selectivity, narrow bandwidth, and good stability. [34] These characteristics, along with their ongoing miniaturization, affordability, and compatibility with CMOS technology, position piezo-MEMS resonators as excellent choices for deployment in microsatellites and radiation monitoring systems.…”

mentioning

confidence: 99%

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Effects of Gamma Ray Radiation on the Performance of Microelectromechanical Resonators

et al. 2023

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While much radiation test data are available for metal‐oxide‐semiconductor (MOS) devices, research into the effects of radiation on microelectromechanical systems (MEMS) is in its relative infancy. Piezoelectrically transduced MEMS resonators have broad applications in signal processing, environmental monitoring, and navigation. Aluminum nitride (AlN), in particular, is an attractive piezoelectric because of its favorable fabrication characteristics and ease of integration into the complementary MOS (CMOS) manufacturing process. The utility of these devices in space and nuclear systems necessitates research into their performance in radiation environments. Resiliency and an established relationship between radiation dose and device behavior provide a critical tool for engineers in their design process. Multiple AlN‐based MEMS resonator designs are created and exposed the devices to 1 Mrad(Si) gamma irradiation from a Cobalt‐60 source while measuring scattering (S‐) parameters in situ. The experimental data are matched to a theoretical model to describe the change in frequency as a function of radiation‐induced displacement damage. It is demonstrated that the AlN‐based resonators are resilient against radiation‐induced charge‐trapping effects. Furthermore, a new method is presented of permanent frequency trimming MEMS resonators up to 30% of their bandwidth without modifying quality factor or motional resistance.

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“…The small signal equivalent circuit components—motional resistance (

R_{\text{m}}

), capacitance (

C_{\text{m}}

), and inductance (

L_{\text{m}}

)—have been derived in previous work. [ 40 ] Specific to this research, the analytical solution of

R_{\text{m}}

for a two‐port piezoelectrically transduced resonator built on a substrate operating in the fundamental WEM is given by

R_{\text{m}} = \frac{\pi}{4} \frac{T}{L} \frac{\sqrt{E_{\text{eff}} \left(\rho\right)_{\text{eff}}}}{Q E_{\text{iezo}}^{2} d_{31}^{2}}

where T is the total thickness of the resonator, L is its length, and

d_{31}

is the transverse piezoelectric coefficient. [ 69 ]

E_{\text{piezo}}

and

\left(\rho\right)_{\text{piezo}}

are Young's modulus and the effective mass density of the piezoelectric layer, respectively.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Effects of Gamma Ray Radiation on the Performance of Microelectromechanical Resonators

et al. 2023

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show abstract

“…For example, rovers use emergency braking to avoid rolling over and fast reverse to avoid collision. Therefore, 3D status measurement plays a role in stability [2][3][4]. As it is known, rocket load is limited, so MEMS accelerometers of smaller size and lighter weight are a better choice for unmanned intelligent devices.…”

Section: Introductionmentioning

confidence: 99%

A Novel Temperature Drift Error Precise Estimation Model for MEMS Accelerometers Using Microstructure Thermal Analysis

Shi

Zhang

et al. 2022

Micromachines

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Owing to the fact that the conventional Temperature Drift Error (TDE) precise estimation model for a MEMS accelerometer has incomplete Temperature-Correlated Quantities (TCQ) and inaccurate parameter identification to reduce its accuracy and real time, a novel TDE precise estimation model using microstructure thermal analysis is studied. First, TDE is traced precisely by analyzing the MEMS accelerometer’s structural thermal deformation to obtain complete TCQ, ambient temperature T and its square T2, ambient temperature variation ∆T and its square ∆T2, which builds a novel TDE precise estimation model. Second, a Back Propagation Neural Network (BPNN) based on Particle Swarm Optimization plus Genetic Algorithm (PSO-GA-BPNN) is introduced in its accurate parameter identification to avoid the local optimums of the conventional model based on BPNN and enhance its accuracy and real time. Then, the TDE test method is formed by analyzing heat conduction process between MEMS accelerometers and a thermal chamber, and a temperature experiment is designed. The novel model is implemented with TCQ and PSO-GA-BPNN, and its performance is evaluated by Mean Square Error (MSE). At last, the conventional and novel models are compared. Compared with the conventional model, the novel one’s accuracy is improved by 16.01% and its iterations are reduced by 99.86% at maximum. This illustrates that the novel model estimates the TDE of a MEMS accelerometer more precisely to decouple temperature dependence of Si-based material effectively, which enhances its environmental adaptability and expands its application in diverse complex conditions.

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“…[30][31][32] The fabrication processes for many piezoelectric thin films allow them to be integrated into complementary metal oxide semiconductor (CMOS) circuitry to deliver a fully integrated solution. [19] Piezoelectrically transduced microscale resonant devices have broad applications such as inertial sensing, [33][34][35][36] radio frequency (RF) signal processing, [37][38][39][40][41][42][43] and environmental monitoring. [44,45] Within these fields, microscale piezoelectric resonators are widely used in various applications like frequency filtering, sensing, and clock generation.…”

mentioning

confidence: 99%

Influence of a Tailored Oxide Interface on the Quality Factor of Microelectromechanical Resonators

Lynes

Chandrahalim

2023

Adv Materials Inter

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Piezoelectric microelectromechanical systems (MEMS) are used as sensors, actuators, energy harvesters, accelerometers, and communication modules. Aluminum nitride (AlN) is an especially attractive piezoelectric material because its fabrication process allows it to be integrated into semiconductor circuitry to deliver a fully integrated solution. Microelectromechanical resonators with AlN sandwiched between n‐type silicon (Si) and top metal electrode with and without a silicon oxide layer are designed and fabricated. The effect of the oxide film is up to a fourfold increase in quality factor (Q) that is consistent from very high frequency (VHF) to super high frequency (SHF). This effect is demonstrated using thin plate bulk acoustic wave modes from 70–80 MHz using the second contour mode and first width extensional mode and from 9.5–10.5 GHz using high overtone thickness modes. To explore potential applications of AlN‐transduced Q‐enhanced MEMS devices in harsh environments, measurements from −200 °C to +200 °C are performed. The Q enhancement is persistent across a wide temperature range for both VHF and SHF resonators with the added oxide layer. Furthermore, AlN‐on‐Si resonators that have a comparable temperature coefficient of frequency to silicon carbide‐based resonators in commercial applications are demonstrated.

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A Piezo-Capacitive High-Frequency Resonant Accelerometer

Cited by 8 publications

References 13 publications

Effects of Gamma Ray Radiation on the Performance of Microelectromechanical Resonators

Effects of Gamma Ray Radiation on the Performance of Microelectromechanical Resonators

A Novel Temperature Drift Error Precise Estimation Model for MEMS Accelerometers Using Microstructure Thermal Analysis

Influence of a Tailored Oxide Interface on the Quality Factor of Microelectromechanical Resonators

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