A plastic damage model for finite element analysis of cracking of silicon under indentation

Wan, Haibo; Shen, Yao; Chen, Qiulong; Chen, Youxing

doi:10.1557/jmr.2010.0270

Cited by 18 publications

(13 citation statements)

References 59 publications

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“…The above results 13 and many other indentation tests [22][23][24][25][26][27][28][29] demonstrate that the subsurface residual deformation induced by indentation are phase transformations and defect. Zhang and Zarudi, 11 Zhang and Tanaka, 14,15 Biddut et al, 20,21 Lorenz et al, 38 Gassilloud et al, 39 and Wu et al 40,41 demonstrated that phase transformation always takes place before the emerge of dislocations and planar defects during nanoindentation and nanoscratching in silicon.…”

Section: Model Descriptionsupporting

confidence: 53%

“…20,21 At the same time, some authors reported experimentally the deformation-induced microdefects, such as stacking faults, dislocations and cracks in silicon under indentation with large loads and a large radius tip. 13,[22][23][24][25][26][27][28][29] For example, Zarudi and Zhang 13 analyzed the subsurface structure of indented mono-crystalline silicon by means of high-resolution a) electron microscopy on cross-section view samples. To understand the micro-structural changes with respect to indentation, a series of tests were conducted under total indentation loads of 30,40,50,70,90, and 100 mN, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…It was found that microcracks were always generated at the bottom of the deformation zone under total indentation loads of 20, 50, and 90 mN, respectively. A modified plastic damage model that accounts for tensile damage and compressive plasticity as well as interactions among them was adopted to simulate the indentation induced cracking of silicon under Berkovich, cube corner, and Vickers indenters by Wan et al 27 Jian 28 investigated the contact-induced structural deformation behaviors in single-crystal Si(100) and MOCVD-deposited GaN thin films by using a combination of nanoindentation, micro-Raman spectroscopy, FIB, and TEM techniques. The micro-Raman analysis, measured from the indented materials which had plastically deformed on loading, showing a phase transformation occurs in Si, whereas the results for GaN thin films do not give sufficient evidence for phase transformations.…”

Section: Introductionmentioning

confidence: 99%

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Emission of partial dislocations in silicon under nanoindentation

Fang

Zhang

2013

J. Mater. Res.

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This paper investigates the critical loading condition that causes the emission of dislocations in silicon subjected to nanoindentation. A theoretical model is established, which follows the deformation process that with increasing the indentation load, a phase transformation takes place, followed by partial dislocations emitting from the interface between the phase-transformed zone and the originally crystalline silicon when the indentation load reaches a critical value. In the model, the emission process represents the generation of a dipole of Shockley partial dislocations. One partial dislocation of the dipole, located at the interface, is considered immobile, whereas the other partial dislocation moves into the bulk of silicon. The effects of the indenter geometry and of the location of dislocation nucleation on the critical indentation load are discussed. The model predicts that a sharp indenter leads to a relatively smaller critical indentation load. The model prediction is verified by an indentation experiment.

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Section: Model Descriptionsupporting

confidence: 53%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Emission of partial dislocations in silicon under nanoindentation

Fang

Zhang

2013

J. Mater. Res.

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“…The figure indicates that plasticity precedes cracking, in line with other results shown in Figure 1 that also show that cracking requires a higher load at smaller effective ball sizes. Wan, H.; Shen, Y.; Chen, Q. and Chen, Y. have elaborated on the plastic 'damage' preceding such cracking produced in silicon crystals with different type indenters [19]. Vodenitcharova, Borrero-López and Hofffman described the related cracking associated with scratching along different directions on {100} silicon crystal wafers [20].…”

Section: Indentation Fracture Mechanicsmentioning

confidence: 99%

Crystal Indentation Hardness

2017

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Abstract:There is expanded interest in the long-standing subject of the hardness properties of materials. A major part of such interest is due to the advent of nanoindentation hardness testing systems which have made available orders of magnitude increases in load and displacement measuring capabilities achieved in a continuously recorded test procedure. The new results have been smoothly merged with other advances in conventional hardness testing and with parallel developments in improved model descriptions of both elastic contact mechanics and dislocation mechanisms operative in the understanding of crystal plasticity and fracturing behaviors. No crystal is either too soft or too hard to prevent the determination of its elastic, plastic and cracking properties under a suitable probing indenter. A sampling of the wealth of measurements and reported analyses associated with the topic on a wide variety of materials are presented in the current Special Issue.

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“…This behaviour clearly predicts an increase in strength of silicon under loading conditions. In order to implement DP model to simulate deformation behaviour of silicon, the compressive crushing of concrete can be replaced by the compressive plasticity of silicon and tensile dilatancy of concrete be ignored [43].…”

Section: Determination Of Drucker-prager Parameters For Sph Modelmentioning

confidence: 99%

Smooth particle hydrodynamics study of surface defect machining for diamond turning of silicon

Mir

Luo

Siddiq

2016

Int J Adv Manuf Technol

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This paper presents the feasibility study of potential application of recently developed surface defect machining (SDM) method in the fabrication of silicon and similar hard and brittle materials using smooth particle hydrodynamics (SPH) simulation approach. Simulation study of inverse parametric analysis was carried out to determine the DruckerPrager (DP) constitutive model parameters of silicon by analysing the deformed material response behaviour using various DP model parameters. Indentation test simulations were carried out to perform inverse parametric study. SPH approach was exploited to machine silicon using conventional and surface defect machining method. To this end, we delve into opportunities of exploiting SDM through optimised machining quality, reduced machining time and lowering cost. The results of the conventional simulation were compared with the results of experimental diamond turning of silicon. In the SPH simulations, various types of surface defects were introduced on the workpiece prior to machining. Surface defects were equally distributed on the top face of the workpiece. The simulation study encompasses the investigation of chip formation, resultant machining forces, stresses and hydrostatic pressure with and without SDM. The study reveals the SDM process is an effective technique to manufacture hard and brittle materials as well as facilitate increased tool life. The study also divulges the importance of SPH evading the mesh distortion problem and offer natural chip formation during machining of hard and brittle materials.

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A plastic damage model for finite element analysis of cracking of silicon under indentation

Cited by 18 publications

References 59 publications

Emission of partial dislocations in silicon under nanoindentation

Emission of partial dislocations in silicon under nanoindentation

Crystal Indentation Hardness

Smooth particle hydrodynamics study of surface defect machining for diamond turning of silicon

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