A position detector based on the lateral photoeffect in a-Si:H/ metal (Ti,Mo) multilayers

Switching Effects, Current Fluctuations and Lateral Photovoltage - The Electrical Appearance of A-Si:H/Metal Multilayers

“…This effect was mainly attributed to a carrier generation and separation at the junction between the crystalline p-type silicon substrate and the first silicon stiblayer of the MLS. In contrast, we reported on a strong influence of the thickness of the metal sublayers on the generated lateral photovoltage [3].…”

“…The samples were deposited by alternating dc-magnetron sputtering using a apparatus with two PPS 5E planar magnetrons and an HZP53 dc-power supply [3]. The deposition parameters chosen were those for optimized highly photoconductive a-Si:II as described in a previous paper [3].…”

“…These systems play an important role as basic materials in various device applications like X-ray mirrors, X-ray detectors [1] and position sensors [2,3] or in self-aligned silicide technology [4].…”

“…Instead, discontinuous metal sublayers and metal clusters arranged in planes were found [3]. Therefore, these systems have to be considered as nanodispersed materials, among these are the granular metals, which are of rapidly growing interest [5-81.…”

Current fluctuations and switching effects in hydrogenated amorphous silicon/molybdenum multilayer thin films

“…The intensity curves from small-angle X-ray scattering (SAXS) spectroscopy for a-Si : HITi MLSs are well described by a hard-sphere model. For samples with 0.8 and 1.1 nm nominal thickness, these islands can be described by spheres of 6 n m diameter with average separations of 13 and 5 nm respectively (Panckow et al 1993). It should be noted that the nominal thickness for these thin sublayers is, probably because of the reduced sticking probability for the metal atoms in the sublayer's initial state of growth, not an equivalent measure for the quantity of material deposited (Panckow er al.…”