A chemically amplified photosensitive polyimide based on polyhydroxyimide (PHI) from cyclobutanetetracarboxylic dianhydride and 4,4 0 -(hexafluoroisopropylidene)bis(2-aminophenol), 4,4 0 -methylenebis[2,6-bis (hydroxymethyl)phenol] (MBHP) as a crosslinker, and (5-propylsulfonyloxyimino-5H-thiophen-2-ylidene)-(2-methylphenyl)acetonitrile (PTMA) as a photoacid generator was developed to obtain the abilities of low temperature patterning, low dielectric constant, and high sensitivity. The chemically amplified photosensitive polyimide, consisting of PHI (70 wt %), MBHP (20 wt %), and PTMA (10 wt %), showed a high sensitivity (D 0.5 ) of 5.9 mJ/cm 2 and a good contrast (c 0.5 ) of 3.9, respectively, producing a clear negative-tone line-and-space pattern with 6-lm resolution. Furthermore, the chemically amplified photosensitive polyimide showed a high transparency in the i-line region and a low dielectric constant of 2.54.