A possible single event burnout hardening technique for SiC Schottky barrier diodes

Liao, Xinfang; Liu, Yi; Li, Jing; Cheng, Jinkun; Yang, Yong

doi:10.1016/j.spmi.2021.107087

Cited by 7 publications

(3 citation statements)

References 19 publications

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“…This is caused by the accumulation of electrons here. In contrast with previous studies [20], the electric field peak at this place was alleviated, which was attributed to the addition of a buffer layer. Therefore, the area below the Schottky interface becomes the most sensitive region of the JBS diode.…”

Section: Simulation Results and Analysiscontrasting

confidence: 99%

“…The temperature response shows a delay relative to the current and also rises rapidly, peaking at about 50-60 ps, followed by a rapid decrease and returning to room temperature gradually after 10 ns. The simulation results are close to those of [20,30]. When the ions incident into the device, a large amount of energy is instantaneously introduced along the ion track, resulting in the ionization of a large number of electron-hole pairs.…”

Section: Simulation Results and Analysissupporting

confidence: 65%

“…To predict the device response more precisely, the typical physics models for SiC devices were applied, as used in the published papers [19,20]. Due to the presence of a heavy doping region (P+), the Fermi distribution is used.…”

Section: Experiments and Simulation Setupmentioning

confidence: 99%

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Heavy Ion Induced Degradation Investigation on 4H-SiC JBS Diode with Different P+ Intervals

Bai

Yang

et al. 2023

Electronics

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The heavy ion radiation response and degradation of SiC junction barrier Schottky (JBS) diodes with different P+ implantation intervals (S) are studied in detail. The experimental results show that the larger the S, the faster the reverse leakage current increases, and the more serious the degradation after the experiment. TCAD simulation shows that the electric field of sensitive points directly affects the degradation rate of devices with different structures. The large transient energy introduced by the heavy ion impact can induce a local temperature increase in the device resulting in lattice damage and the introduction of defects. The reverse leakage current of the degraded device is the same at low voltage as before the experiment, and is gradually dominated by space-charge-limited-conduction (SCLC) as the voltage rises, finally showing ballistic transport characteristics at high voltage.

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Section: Simulation Results and Analysiscontrasting

confidence: 99%

Section: Simulation Results and Analysissupporting

confidence: 65%