A Postalignment Method for High-Mobility Organic Thin-Film Transistors

Zhang, Guocheng; Zhang, Pingjun; Hu, Daobing; Chen, Huipeng; Guo, Tailiang

doi:10.1109/ted.2018.2795032

Cited by 11 publications

(6 citation statements)

References 34 publications

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“…The green CdSe/ZnS QDs were obtained from Poly OptoElectronics Co. Ltd, and the red (CdSe/CdS/ZnS) and blue (ZnCdS/ZnS) QDs were obtained from Suzhou Xingshuo Nanotech Co., Ltd. All QDs were dispersed in normal hexane with a concentration of 15 mg/mL. π-Extended copolymerpoly[2,5-bis(alkyl)pyrrolo[3,4- c ]pyrrole-1,4(2 H ,5 H )-dione-alt-5,5′-di(thiophen-2-yl)-2,2′-( E )-2-(2-(thiophen-2-yl)vinyl)-thiophene] (PDVT-8) ( M w = 50 K, polymer dispersity index = 2.4) was obtained from 1-Materials. − The solution of silver nanowires (AgNWs) (5 mg/mL in isopropanol) was obtained from Suzhou ColdStones Technology Co., Ltd. diuPoly(4-vinylphenol) (PVP) ( M w = 25 000), 4,4′-(hexafluoroisopropylidene)-diphthalic anhydride (99%), and propylene glycol monomethyl ether acetate (>99.5%) were obtained from Sigma-Aldrich.…”

Section: Methodsmentioning

confidence: 99%

High-Performance Quantum-Dot Light-Emitting Transistors Based on Vertical Organic Thin-Film Transistors

Chen

Yan

et al. 2019

ACS Appl. Mater. Interfaces

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In this work, a novel vertical quantum-dot light-emitting transistor (VQLET) based on a vertical organic thin-film transistor is successfully fabricated. Benefiting from the new vertical architecture, the VQLET is able to afford an extremely high current density, which allows most of the organic thin film transistors (OTFT) even with low mobility (for instance, poly(3-hexylthiophene)) to drive a quantum-dot light-emitting diode (QLED), which was previously unavailable. Moreover, the hole injection barrier could be modulated by the additional gate electrode, which precisely optimizes the charge balance in the device, a critical issue in QLED, resulting in the precise control of current density and brightness of the VQLET. The VQLET shows a high performance with a maximum current efficiency of 37 cd/A. Furthermore, integrating OTFT and QLED into a single device, the VQLET features drastic advantages by realizing active matrix quantum-dot light-emitting diodes (AMQLEDs), which significantly reduces the number of transistors and frees the large area fraction occupied by transistors. Hence, these results indicate that the VQLET provides a new strategy for realizing a low-cost, solution-processed, high-performance OTFT-AMQLED for the flat panel display technology. Moreover, the novel design offers a unique method to exquisitely control the charge balance and maximize the efficiency the QLED.

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Section: Methodsmentioning

confidence: 99%

High-Performance Quantum-Dot Light-Emitting Transistors Based on Vertical Organic Thin-Film Transistors

Chen

Yan

et al. 2019

ACS Appl. Mater. Interfaces

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“…Lihua He, Enlong Li, Weixin He, Yujie Yan, Shuqiong Lan, Rengjian Yu, Huipeng Chen,* and Tailiang Guo DOI: 10.1002/aelm.202100599 tailoring. [1][2][3][4][5][6][7][8][9][10] Organic nonvolatile memory based on OTFT, as an important and basic component of organic information storage components, is the fundamental component of organic electronic systems, acting as code storage, data storage, static or dynamic memory, sensor memory and neuromorphic computing. [11,12] Organic nonvolatile memory can be classified into three types: floating gate nonvolatile memory, ferroelectric nonvolatile memory, and polymer electret-based nonvolatile memory, [3,[13][14][15][16][17][18][19][20][21][22] among which, the floating gate nonvolatile memory and the ferroelectric nonvolatile memory have attracted considerable attentions.…”

Section: Complementary Of Ferroelectric and Floating Gate Structure For High Performance Organic Nonvolatile Memorymentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9][10] Organic nonvolatile memory based on OTFT, as an important and basic component of organic information storage components, is the fundamental component of organic electronic systems, acting as code storage, data storage, static or dynamic memory, sensor memory and neuromorphic computing. [11,12] Organic nonvolatile memory can be classified into three types: floating gate nonvolatile memory, ferroelectric nonvolatile memory, and polymer electret-based nonvolatile memory, [3,[13][14][15][16][17][18][19][20][21][22] among which, the floating gate nonvolatile memory and the ferroelectric nonvolatile memory have attracted considerable attentions. For ferroelectric nonvolatile memory device, the storage is realized based on the lagging behavior of the ferroelectric material [1,[23][24][25] which has the advantages of fast switching speed, long data retention, and high programming/erasing endurance.…”

Section: Complementary Of Ferroelectric and Floating Gate Structure For High Performance Organic Nonvolatile Memorymentioning

confidence: 99%

Complementary of Ferroelectric and Floating Gate Structure for High Performance Organic Nonvolatile Memory

et al. 2021

Adv Elect Materials

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Organic thin film transistor (OTFT) based nonvolatile memory has made significant progress due to its biocompatibility, flexibility, and low cost, in which ferroelectric transistor memory and floating gate transistor memory play the main roles in organic nonvolatile transistor memory. Here, a novel layered hybrid structure OTFT nonvolatile memory is invented by combining ferroelectric poly(vinylidene fluoride‐co‐trifluoroethylene) P(VDF‐TrFE) with a floating gate layer utilizing CdSe/ZnS quantum dots (QDs), which integrates the advantages of ferroelectric memory and floating gate memory. The core–shell structured CdSe/Zns QDs are acted as robust charge trapping centers due to their band structure similar to a quantum well, preventing the back diffuse of trapped charges, while P(VDF‐TrFE) provides additional polarized electric field to modulate the capture of charge. The resultant devices exhibit high on‐state current (≈10−5 A), low off‐state current (≈10−10 A), excellent switch ratio (≈105), and retention characteristic (>104 s). Furthermore, a superior memory window, more than 85.6% of scanning voltage range, higher than most reported organic transistor memories, is achieved, which endows the device wide operating condition and significant discrimination between on and off state. The fine‐structured OTFT memory opens up a unique path for desirable memory to meet the growing demand of microelectronic industry.

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“…To date, a mass of electronic devices have been proposed to simulate the synaptic basic learning function and memory behavior, including two-terminal-based resistive memory devices and three-terminal-based field-effect transistors (FETs). − A thin-film transistor (TFTs)-based synapse device, also known as synaptic transistors, can write information via the gate voltage pulse and read it out through drain voltage simultaneously, making it a better potential candidate for neuromorphic computation compared with two-terminal-based devices. In the past few years, various semiconductor materials have been reported as the active layers of synaptic transistors to simulate synaptic behavior, such as inorganic metal oxide, − organic polymer, , organic small molecule materials, , and two-dimensional (2D) materials. − Among these synaptic devices, transistors with 2D materials as the functional layer have shown great potential to improve device properties because of its unique size advantages that cannot be realized by traditional bulk forms of materials, such as the uniform microstructure and effective gate control. − Traditional 2D materials, such as black phosphorus, MoS 2 , and graphene, with an ultrathin nature of atomic or molecular scaling thickness generally protect device performance from surface defects, scattering, and diffusion, which is ideal to mimic synapses and can boost the development of artificial synaptic technology. , Ren and co-workers have demonstrated a graphene-based synaptic transistor with tunable plasticity . The excitatory and inhibitory synapse could be achieved in a graphene synaptic device because of its ambipolar conductance.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Organic Synaptic Transistors with an Ultrathin Active Layer for Neuromorphic Computing

Yang

et al. 2021

ACS Appl. Mater. Interfaces

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In recent years, much attention has been focused on two-dimensional (2D) material-based synaptic transistor devices because of their inherent advantages of low dimension, simultaneous read–write operation and high efficiency. However, process compatibility and repeatability of these materials are still a big challenge, as well as other issues such as complex transfer process and material selectivity. In this work, synaptic transistors with an ultrathin organic semiconductor layer (down to 7 nm) were obtained by the simple dip-coating process, which exhibited a high current switch ratio up to 106, well off state as low as nearly 10–12 A, and low operation voltage of −3 V. Moreover, various synaptic behaviors were successfully simulated including excitatory postsynaptic current, paired pulse facilitation, long-term potentiation, and long-term depression. More importantly, under ultrathin conditions, excellent memory preservation, and linearity of weight update were obtained because of the enhanced effect of defects and improved controllability of the gate voltage on the ultrathin active layer, which led to a pattern recognition rate up to 85%. This is the first work to demonstrate that the pattern recognition rate, a crucial parameter for neuromorphic computing can be significantly improved by reducing the thickness of the channel layer. Hence, these results not only reveal a simple and effective way to improve plasticity and memory retention of the artificial synapse via thickness modulation but also expand the material selection for the 2D artificial synaptic devices.

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A Postalignment Method for High-Mobility Organic Thin-Film Transistors

Cited by 11 publications

References 34 publications

High-Performance Quantum-Dot Light-Emitting Transistors Based on Vertical Organic Thin-Film Transistors

High-Performance Quantum-Dot Light-Emitting Transistors Based on Vertical Organic Thin-Film Transistors

Complementary of Ferroelectric and Floating Gate Structure for High Performance Organic Nonvolatile Memory

High-Performance Organic Synaptic Transistors with an Ultrathin Active Layer for Neuromorphic Computing

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