A Postsynthesis Decomposition Strategy for Group III–Nitride Quantum Wires

Brockway, Lance; Pendyala, Chandrashekhar; Jasiński, Jacek B.; Sunkara, Mahendra K.; Vaddiraju, Sreeram

doi:10.1021/cg200809k

Cited by 20 publications

(27 citation statements)

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“…Our systematic observation of wire tapering contrasts with the homogeneous reduction in nanowire diameter during thermal decomposition reported in Ref. 25. This discrepancy might be related to the fact that in contrast to Ref.…”

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confidence: 99%

“…This discrepancy might be related to the fact that in contrast to Ref. 25, where the decomposition process took place in H 2 or NH 3 atmospheres, we decomposed our nanowires in UHV, making it possible to carry out this process directly in the molecular beam epitaxy chamber, and to control it in situ by quadrupole mass spectrometry (QMS).…”

mentioning

confidence: 87%

“…In contrast to previous decomposition studies, 25,26 we monitor the decomposition in situ by QMS [29][30][31] and can thus control this process. Since the dissociation of GaN in UHV is thermally activated, 32-34 the decomposition rate of GaN nanowires is controlled primarily by the substrate temperature.…”

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confidence: 99%

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Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature

et al. 2016

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The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which gives rises to much stronger enhancement, has proven to be more difficult to achieve because of the rapid nonradiative surface/interface recombination in hybrid dielectric-semiconductor structures. Here, we demonstrate intense excitonic emission from bare GaN nanowires with diameters down to 6 nm. The large dielectric mismatch between the nanowires and vacuum greatly enhances the Coulomb interaction, with the thinnest nanowires showing the strongest dielectric confinement and the highest radiative efficiency at room temperature. In situ monitoring of the fabrication of these structures allows one to accurately control the degree of dielectric enhancement. These ultrathin nanowires may constitute the basis for the fabrication of advanced low-dimensional structures with an unprecedented degree of confinement.

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Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature

et al. 2016

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“…16 As an alternative to this two-step etching approach, a new top-down fabrication method coined as selective area sublimation (SAS) was recently demonstrated by Damilano et al 17,19 This approach avoids any damage to the NW sidewalls as it is based not on chemical etching but on material sublimation in vacuum, a process used before by different groups to decrease the diameter of as-grown NWs. [20][21][22] Damilano et al utilized this simple method to obtain random arrays of GaN NWs and (In,Ga)N/GaN NW heterostructures. 17,19 For device applications, it is almost mandatory that the NWs do not have a random arrangement, but form an ordered array with precisely tunable spatial arrangements, NW diameters, and NW-to-NW spacings.…”

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confidence: 99%

Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation

et al. 2019

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We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on Al 2 O 3 . Arrays with nanowire diameters and spacings ranging from 50 to 90 nm and 0.1 to 0.7 µm, respectively, are simultaneously produced under identical conditions. The sublimation process, carried out under high vacuum conditions, is analyzed in situ by reflection high-energy electron diffraction and line-of-sight quadrupole mass spectromety. During the sublimation process, the GaN(0001) surface vanishes, giving way to the formation of semi-polar {1103} facets which decompose congruently following an Arrhenius temperature dependence with an activation energy of (3.54 ± 0.07) eV and an exponential prefactor of 1.58 × 10 31 atoms cm −2 s −1 . The analysis of the samples by low-temperature cathodoluminescence spectroscopy reveals that, in contrast to dry etching, the sublimation process does not introduce nonradiative recombination centers at the nanowire sidewalls. This technique is suitable for the top-down fabrication of a variety of ordered nanostructures, and could possibly be extended to other material systems with similar crystallographic properties such as ZnO. † Electronic Supplementary Information (ESI) available: Analysis of GaN facets formed during thermal sublimation by reflection high-energy electron diffraction. See

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“…Indeed, local, short-scale fluctuations in the indium content could lead to several localization centers in each disc-in-wire structure. Therefore, as mentioned briefly above, in order to achieve single high-quality InGaN QDs, we established an unconventional process consisting of further two steps: (1) "reverse-reaction growth" by in situ thermal decomposition of the {1-100} sidewall surfaces and (000-1) top surface under ultrahigh vacuum (similar to recently reported approaches of thermal annealing [29][30][31][32] ) and (2) subsequent regrowth of an additional GaN capping shell to wrap the InGaN/GaN nanowire QDs up. Figure 1A-E schematically illustrates the evolution of the grown structures.…”

Section: Introductionmentioning

confidence: 99%

Single‐photon emission from a further confined InGaN/GaN quantum disc via reverse‐reaction growth

Sun

Wang

Sheng

et al. 2019

Quantum Engineering

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We demonstrate high-purity single-photon emission from a high-quality and further confined InGaN (indium gallium nitride) quantum disc in a GaN (gallium nitride) nanowire fabricated by an unconventional and versatile reverse-reaction fabrication method. This further confined structure exhibits single-photon emission with a g (2) (0) value of 0.11 at 8 K with a sub-nanosecond radiative lifetime. The formation of the further confined structure using this versatile reverse-reaction fabrication approach overcomes many limitations in conventional self-assembled III-nitride nanowires and, thus, exhibits a strong potential application as a high-purity single-photon source. KEYWORDSInGaN, molecular beam epitaxy, nanowires, quantum dots, reverse-reaction growth, self-assembled, single-photon emission Quantum Engineering. 2019;1:e20.wileyonlinelibrary.com/journal/que2

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A Postsynthesis Decomposition Strategy for Group III–Nitride Quantum Wires

Cited by 20 publications

References 50 publications

Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature

Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature

Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation

Single‐photon emission from a further confined InGaN/GaN quantum disc via reverse‐reaction growth

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