A Power Efficient Frequency Divider With 55 GHz Self-Oscillating Frequency in SiGe BiCMOS

Abstract

A power efficient static frequency divider in commercial 55 nm SiGe BiCMOS technology is reported. A standard Current Mode Logic (CML)-based architecture is adopted, and optimization of layout, biasing and transistor sizes allows achieving a maximum input frequency of 63 GHz and a self-oscillating frequency of 55 GHz, while consuming 23.7 mW from a 3 V supply. This results in high efficiency with respect to other static frequency dividers in BiCMOS technology presented in the literature. The divider topology does not use inductors, thus optimizing the area footprint: the divider core occupies 60 × 65 μm2 on silicon.

A broadband ECL static frequency divider in InP DHBT using differential <i>f_t</i>-doubler

“…So far, numerous dividers based on different topologies and processes have been reported. Silicon-Germanium (SiGe) [11,12,13] and indium phosphide (InP) [14,15,16,17,18,19] are employed in many high-speed ECL dividers due to their high unity-gain (cut-off) frequency ( 𝑓 𝑡 ).In addition, several methods documented in the literature extend the operating frequency range of frequency dividers. These techniques include inductive peaking [20], split resistors [3], negative capacitance technology [21], and capacitive degeneration [22].In 1972, a differential implementation of the 𝑓 𝑡 -doubler structure was patented for the first time by Carl R. Batties [23], then it was applied in many field [24,25,26,27,28].…”

A 130-to-220-GHz Frequency Quadrupler with 80 dB Dynamic Range for 6G Communication in 0.13-μm SiGe Process

“…Compared to GaAs and GaN processes, the SiGe BiCMOS technologies are capable for higher integration and lower power consumption, which is crucial for portable devices with compact size. Various solid-state circuits have been implemented in SiGe technologies [1][2][3][4], such as the CML divider (Current Mode Logic divider) [5], transimpedance amplifier [6], voltage-controlled oscillators (VCOs) [7], bandpass filter [8], and switch [9]. Including the above various blocks based on the SiGe BiCMOS process, they have been widely used in various sub-THz systems, including radar receivers [10], 5G transceiver [11], and high-resolution imaging device [12].…”