2019 IEEE International Symposium on Circuits and Systems (ISCAS) 2019
DOI: 10.1109/iscas.2019.8702787
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A Prediction Model for Implementing DVS in Single-Rail Bundled-Data Handshake-Free Asynchronous Circuits

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“…The AnARM was fabricated with a 28 nm technology, as reported in [9]. It first served as a proof of concept to be compared with other general-purpose processors and provided a context for a novel self-timed cache architecture [10], a new model for dynamic voltage scaling [11], and original test methods [12]. We revisit the original Octasic self-timed design style using circuits and methods coming from the asynchronous literature, with the objective of lowering the barrier with timing-driven EDA flows.…”
Section: Introductionmentioning
confidence: 99%
“…The AnARM was fabricated with a 28 nm technology, as reported in [9]. It first served as a proof of concept to be compared with other general-purpose processors and provided a context for a novel self-timed cache architecture [10], a new model for dynamic voltage scaling [11], and original test methods [12]. We revisit the original Octasic self-timed design style using circuits and methods coming from the asynchronous literature, with the objective of lowering the barrier with timing-driven EDA flows.…”
Section: Introductionmentioning
confidence: 99%