2024
DOI: 10.11591/ijece.v14i2.pp1390-1397
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A proposal and simulation analysis for a novel architecture of gate-all-around polycrystalline silicon nanowire field effect transistor

Asseya El-amiri,
Fouad Demami

Abstract: A proposal for a novel gate-all-around (GAA) polycrystalline silicon nanowire (poly-SiNW) field effect transistor (FET) is presented and discussed in this paper. The device architecture is based on the realization of poly-SiNW in a V-shaped cavity obtained by tetra methyl ammonium hydroxide (TMAH) etch of monocrystalline silicon (100). The device’s behavior is simulated using Silvaco commercial software, including the density of states (DOS) model described by the double exponential distribution of acceptor tr… Show more

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