A proposed punch-through microwave negative-resistance diode

Power limitations in BARITT devices

“…The comparison of small-signal conductances. It is followed by an approximate analysis which, under the large-signal condition, approaches asymptotically that given by Riiegg [1]. Then the results of computer simulation are given to illustrate the basic device mechanisms involved in the BARITT device.…”

“…The objectives of this paper are to estimate the power capability and efficiency of BARITT devices and to compare the results of a large-signal computer simulation with the predictions of existing first-order theories in order to reveal the basic factors limiting the power and the efficiency of the device. The first-order large-signal calculations of power and efficiency reported by Riiegg [ 1 ] were chosen as a reference for comparison with numerical results obtained here. For convenience and emphasis the limiting assumptions embodied in this theory [I] are: (1) an in-phase impulse current injection of unlimited magnitude, (2) a constant saturated carrier drift velocity throughout the entire drift region and (3) the large-signal limitation due to avalanche breakdown at the maximum RF voltage and the minimum velocity-saturation field during the minimum RF voltage.…”

“…The first-order large-signal calculations of power and efficiency reported by Riiegg [ 1 ] were chosen as a reference for comparison with numerical results obtained here. For convenience and emphasis the limiting assumptions embodied in this theory [I] are: (1) an in-phase impulse current injection of unlimited magnitude, (2) a constant saturated carrier drift velocity throughout the entire drift region and (3) the large-signal limitation due to avalanche breakdown at the maximum RF voltage and the minimum velocity-saturation field during the minimum RF voltage. That theory predicted that Si BARITT devices should be capable of generating a power output of 24,000W/cm 2 with a maximum efficiency of 21% at 10GHz [1].…”

“…For convenience and emphasis the limiting assumptions embodied in this theory [I] are: (1) an in-phase impulse current injection of unlimited magnitude, (2) a constant saturated carrier drift velocity throughout the entire drift region and (3) the large-signal limitation due to avalanche breakdown at the maximum RF voltage and the minimum velocity-saturation field during the minimum RF voltage. That theory predicted that Si BARITT devices should be capable of generating a power output of 24,000W/cm 2 with a maximum efficiency of 21% at 10GHz [1]. The experimentally reported values are, respectively, two orders and one order of magnitude smaller [2][3][4].…”

“…To estimate the power capability of BARITT devices the maximum power and efficiency of four X-band device structures: Si p-n-p and its complementary n-p-n, n-p-v-n, and GaAs n-p-n structures, are computed numerically. To reveal and quantify the basic factors that significantly degrade the power and efficiency of the BARITT device from the capabilities predicted by the first-order theory, the numerical results of the Si n-p-v-n Read structure are used for comparison with those reported by Riiegg [1]. Finally, the effects of doping profile and material parameters upon the properties and in particular the power capability of BARITT devices are given.…”