A quantitative analysis of time-decay reproducible stress-induced leakage current in SiO/sub 2/ films

Sakakibara, K.; Ajika, N.; Eikyu, K.; Ishikawa, Kiyoshi; Miyoshi, Hirokazu

doi:10.1109/16.585557

Cited by 65 publications

(25 citation statements)

References 7 publications

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“…5,7,[16][17][18][19][20][21][22][23][24][25] Our values can be approached to some of those previously given. 5,17,[19][20][21]24 Researchers have found cross section values in the range of 10 Ϫ16 -10 Ϫ15 cm 2 which were attributed to the presence of the As-related traps, 20,22,24 or when they annihilated positive charges which were supposed to be created by an impactionization process; 5,17 i.e., band-to-band or traps ionization. Other researchers have attributed these cross section values to electron trapping in neutral traps.…”

Section: Theory and Fitting Curvesmentioning

confidence: 96%

“…Other researchers have attributed these cross section values to electron trapping in neutral traps. 19,21 Traps linked to the presence of As-related species are ruled out because there was no As ϩ implantation in our samples. However, we cannot exclude the presence of traps related to boron ions which were implanted through the gate oxide to adjust the transistor threshold voltage.…”

Section: Theory and Fitting Curvesmentioning

confidence: 99%

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Relaxation of positive charge during bidirectional electric stress on metal–oxide–silicon capacitors

Hdiy

Ziane

1999

Journal of Applied Physics

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Articles you may be interested inAn aluminum-gate metal-oxide-silicon capacitor with a tunnel-thin oxide under the bidirectional electric stress Positive charge instability during bidirectional stress on metal-oxide-silicon capacitors A study on the capacitance-voltage characteristics of metal-Ta 2 O 5 -silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications J. Appl. Phys. 85, 4087 (1999); 10.1063/1.370315Fowler-Nordheim stressing of polycrystalline Si oxide Si structures: Observation of stress induced defects in the oxide, oxide/Si interface, and in bulk silicon

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Section: Theory and Fitting Curvesmentioning

confidence: 96%

Section: Theory and Fitting Curvesmentioning

confidence: 99%

Relaxation of positive charge during bidirectional electric stress on metal–oxide–silicon capacitors

Hdiy

Ziane

1999

Journal of Applied Physics

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“…In Ref. [28], it is considered that several processes may establish the change in leakage current with time at a constant applied voltage: (a) recombination of the positive charge resulting in a non-reproducible current component, (b) trapping/de-trapping process of traps located close to the interfaces causes a transient component of current and (c) trap-assisted tunneling leading to a steady-state current component. The observed decay of DJ/J Initial is clear evidence of the transient character of current at limited conditions.…”

Section: Resultsmentioning

confidence: 99%

The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers

Thangadurai

Kaplan

Mikhelashvili

et al. 2009

Microelectronics Reliability

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“…This is region B. In region B, the effective breakdown barrier is lowered due to the deep level defect (E c -2.3 eV) in the insulator film [17], but the insulator film behavior is assumed to remain.…”

Section: Model Of Conduction Mechanism In Breakdown and Discussion Ofmentioning

confidence: 99%

Post‐breakdown conduction mechanism of thin oxide films and their aspects

Komiya

Oka

Okada

et al. 2003

Electron Comm Jpn Pt II

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SUMMARYThis study investigates extremely thin silicon oxide with thicknesses of 3 to 5 nm produced by various fabrication processes, and the post-breakdown characteristics are studied. This paper describes the results of comparison. By analysis of the conduction characteristics after intrinsic breakdown, it is shown that there exist two conduction mechanisms-resistive and barrier type-for oxide films with thicknesses of 3.3 and 5.2 nm. These properties of the conduction characteristics are very similar to those reported for the soft breakdown state, which indicates that the conduction mechanisms essentially do not differ much between soft and intrinsic breakdown. It is also shown that the intrinsic breakdown process progresses in two stages in an oxide film with a thickness of 3.3 nm, in contrast to film with a thickness of 5.2 nm.

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A quantitative analysis of time-decay reproducible stress-induced leakage current in SiO/sub 2/ films

Cited by 65 publications

References 7 publications

Relaxation of positive charge during bidirectional electric stress on metal–oxide–silicon capacitors

Relaxation of positive charge during bidirectional electric stress on metal–oxide–silicon capacitors

The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers

Post‐breakdown conduction mechanism of thin oxide films and their aspects

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