A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide

Luo, Xichun; Goel, Saurav; Reuben, Robert Lewis

doi:10.1016/j.jeurceramsoc.2012.04.016

Cited by 152 publications

(46 citation statements)

References 54 publications

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“…In the above expression and E are the Poisson's ratio and elastic modulus of 4H-SiC [12] respectively while E i and i are the elastic modulus and Poisson's ratio of the diamond indenter which were considered as 1141 GPa and 0.07 respectively. This gives the value of Er as 296 GPa for the current combination of diamond and 4H-SiC.…”

Section: : P-h Plots For Indentations Made On Single Crystal 4h-sic Amentioning

confidence: 99%

“…where max is the tensile strength underneath the indenter, P is the indentation load (1500 µσ), is the Poisson's ratio (0.23) of 4H-SiC, E is the elastic modulus (347 GPa) [12] of 4H-SiC and R is the indenter radius (300 nm). …”

Section: : P-h Plots For Indentations Made On Single Crystal 4h-sic Amentioning

confidence: 99%

“…Across all other polytypes, two major polymorphs are -SiC and -SiC with hexagonal and zinc-blende lattice structures, respectively. The main engineering properties of -SiC (3C-SiC) and -SiC (6H-SiC and 4H-SiC) have already been summarized elsewhere [12].…”

mentioning

confidence: 99%

“…Besides offering a larger DBT depth, 4H-SiC also offers the best machined surface and sub-surface integrity [12] across all other major polytypes of SiC which means that it is possible to obtain higher manufacturing productivity for single crystal 4H-SiC. Hence, an investigation on the nanomechanical response of 4H-SiC is scientifically important at this point of time in order to aid cost effective manufacturing of 4H-SiC.…”

mentioning

confidence: 99%

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Incipient plasticity in 4H-SiC during quasistatic nanoindentation

Goel

Yan

Luo

et al. 2014

Journal of the Mechanical Behavior of Biomedical Materials

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This version is available at https://strathprints.strath.ac.uk/47640/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the Strathprints administrator: strathprints@strath.ac.ukThe Strathprints institutional repository (https://strathprints.strath.ac.uk) is a digital archive of University of Strathclyde research outputs. It has been developed to disseminate open access research outputs, expose data about those outputs, and enable the management and persistent access to Strathclyde's intellectual output. Abstract:Silicon carbide (SiC) is an important orthopaedic material due to its inert nature and superior mechanical and tribological properties. Some of the potential applications of silicon carbide include coating for stents to enhance hemocompatibility, coating for prosthetic-bearing surfaces and uncemented joint prosthetics. This study is the first to explore nanomechanical response of single crystal 4H-SiC through quasistatic nanoindentation. Displacement controlled quasistatic nanoindentation experiments were performed on single crystal 4H-SiC specimen using a blunt Berkovich indenter (300 nm tip radius) at extremely fine indentation depths of 5 nm, 10 nm, 12 nm, 20 nm, 25 nm and 50 nm. Load-displacement curve obtained from the indentation experiments showed yielding or incipient plasticity in 4H-SiC typically at a shear stress of about 21 GPa (~ an indentation depth of 33.8 nm) through a pop-in event. An interesting observation was that the residual depth of indent showed three distinct patterns: (i) Positive depth hysteresis above 33 nm,(ii) no depth hysteresis at 12 nm, and (iii) negative depth hysteresis below 12 nm. This contrasting depth hysteresis phenomenon is hypothesized to originate due to the existence of compressive residual stresses (upto 143 MPa) induced in the specimen by the polishing process prior to the nanoindentation.2

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Section: : P-h Plots For Indentations Made On Single Crystal 4h-sic Amentioning

confidence: 99%

Section: : P-h Plots For Indentations Made On Single Crystal 4h-sic Amentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Incipient plasticity in 4H-SiC during quasistatic nanoindentation

Goel

Yan

Luo

et al. 2014

Journal of the Mechanical Behavior of Biomedical Materials

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“…Besides the common excellences, RS-SiC has the unique advantage of a low manufacturing cost, which makes it an ideal mirror material for space telescope systems [5,6]. Meanwhile, 4H-SiC is one of the most attractive semiconductor materials for the next-generation power device applications, as it has outstanding electronic properties [7].…”

Section: Introductionmentioning

confidence: 99%

Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide

Shen

Deng

et al. 2016

Appl. Phys. A

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For effective machining of difficult-to-machine materials, such as reaction-sintered silicon carbide (RSSiC) and single-crystal 4H silicon carbide (4H-SiC), a novel polishing technique named anodic oxidation polishing was proposed, which combined with the anodic oxidation of substrate and slurry polishing of oxide. By scanning electron microscopy/energy-dispersive X-ray spectroscopy (SEM-EDX) observation and atomic force microscopy analysis, both the anodic oxidation behaviors of RS-SiC and 4H-SiC were investigated. Through comparison of the surfaces before and after hydrofluoric acid etching of the oxidized samples by the scanning white light interferometry (SWLI) measurement, the relationships between oxidation depth and oxidation time were obtained, and the calculated oxidation rate for RS-SiC was 5.3 nm/s and that for 4H-SiC was 5.8 nm/s based on the linear DealGrove model. Through anodic oxidation polishing of RSSiC substrate and 4H-SiC substrate, respectively, the surface roughness rms obtained by SWLI was improved to 2.103 nm for RS-SiC and to 0.892 nm for 4H-SiC. Experimental results indicate that anodic oxidation polishing is an effective method for the machining of RS-SiC and 4H-SiC samples, which would improve the process level of SiC substrates and promote the application of SiC products in the fields of optics, ceramics, semiconductors, electronics, and so on.

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Molecular Dynamics Simulation of Nanomachining Mechanism between Monocrystalline and Polycrystalline Silicon Carbide

Liu

Yang

et al. 2021

Advcd Theory and Sims

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As an advanced ceramics material, silicon carbide (SiC) is extensively applied in numerous industries. In this study, molecular dynamics method is used to comparatively investigate the nanomachining mechanism between monocrystalline SiC (mono-SiC) and polycrystalline SiC (poly-SiC) ceramics. Four simulations are performed for the two materials with and without ultrasonic vibration-assisted machining (UVAM). The diamond tool is set as a non-rigid body and vibrated along the depth direction with 100 GHz in frequency and 0.5 nm in amplitude. The effects of material and ultrasonic vibration on the nanomachining mechanism of SiC are analyzed in depth, including the surface generation, subsurface damage, and tool wear. It is determined that the machinability of SiC ceramics can be effectively improved by UVAM. The machining-induced damage extent of poly-SiC is more serious than that of mono-SiC. It is also found that UVAM can effectively reduce the machining-induced damage, decrease the machining resistance, and increase the possibility of ductile removal, but bring about a slightly larger tool wear.

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A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide

Cited by 152 publications

References 54 publications

Incipient plasticity in 4H-SiC during quasistatic nanoindentation

Incipient plasticity in 4H-SiC during quasistatic nanoindentation

Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide

Molecular Dynamics Simulation of Nanomachining Mechanism between Monocrystalline and Polycrystalline Silicon Carbide

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