A Quick Experimental Technique In Estimating The Cumulative Plasma Charging Current with MOSFET and Determining The Reliability of The Protection Diode In The Plasma Ambient

Abstract

We developed a quick experimental technique for evaluating the cumulative plasma charging current density with MOSFEiTs. A one second stress at 9 volts for gate oxide thickness of lOOA is sufficient to force the Fowler-Nordheim tunneling condition to reveal the plasma-induced oxide damages to the MOSFET, then the oxide damages can be easily characterized by I-V meansurement.