Halide
perovskite compounds emerged recently as great candidates
for efficient photovoltaics, although huge technical obstacles still
have to be overcome. Additionally, their accurate theoretical description
is difficult to be reached due to the high level of complexity of
this class of materials. In this work, we provide a vast panorama
of electronic properties, correlated with its relaxed internal geometry,
for a group of 48 ABX3 cubic halide perovskites (A = CH3NH3, CH(NH2)2, Cs, Rb; B
= Pb, Sn, Ge, Si; X = I, Br, Cl). Including the DFT-1/2 approximated
quasiparticle and spin–orbit corrections, our model results
in band gaps with an impressive agreement with experiments, comparable
with the expensive state-of-the-art GW method. We provide trends in
electronic properties depending on different atoms exchanged, concluding
that 16 materials present band gaps more suitable for solar cell applications.
Besides, the formation of BX3 units is observed in hybrid
Sn, Ge, and Si perovskites, resulting from the distortion of the inorganic
lattice. We elucidate the significant band gap broadening due to this
segregation using orbital overlap considerations, which is consistent
with previous experimental findings. Finally, the presented method
establishes a reliable low-cost approach, being especially useful
for more sophisticated perovskite systems as heterostructures, alloys,
and low symmetric compounds.