2021
DOI: 10.1016/j.mssp.2020.105555
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A real-time aging monitoring method of parallel-connected IGBT modules

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Cited by 5 publications
(3 citation statements)
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“…Because DGs have larger time constants than ESSs [6], which are based on highperformance modulation controllers (MC) and power semiconductors [7,8], the use of traditional DGs and ESSs in shipboard electrical power systems leads to the need for a control system capable of achieving the reliable operation of SHEPS power sources in both normal and emergency modes.…”
Section: Introductionmentioning
confidence: 99%
“…Because DGs have larger time constants than ESSs [6], which are based on highperformance modulation controllers (MC) and power semiconductors [7,8], the use of traditional DGs and ESSs in shipboard electrical power systems leads to the need for a control system capable of achieving the reliable operation of SHEPS power sources in both normal and emergency modes.…”
Section: Introductionmentioning
confidence: 99%
“…The turn-off process is the capacitor discharge process, which is the opposite of the turn-on process. Before the shutdown signal arrives, the IGBT is in the on-state [22][23][24]. And the gate voltage is V GEx = V Gx,on .…”
Section: Turn-off Delaymentioning
confidence: 99%
“…For the external resistance R G,ext , a high-precision LCR bridge is used to measure the resistance to obtain the external turn-on gate resistance R Gon,ext and the external turn-off gate resistance R Goff,ext . For the internal R G,int , the resistance is obtained by measuring the platform voltages V G2(pl)on and V G2(pl)off and the gate currents I G,on and I G,off of the voltages between G2 and AE during the turn-on and turn-off process.By substituting them into Formulas (23) and (24), the gate turn-on resistance R G,on and the gate turn-off resistance R G,off can be obtained by combining the measured external resistance.…”
Section: Characteristic Parameter Identificationmentioning
confidence: 99%