A reconfigurable solid-state plasma dipole antenna based on SPiN diodes

Kang, Haiyan; Hu, Haodong; Han, Bowen; Su, Housheng

doi:10.1016/j.mee.2019.04.025

Cited by 4 publications

(1 citation statement)

References 14 publications

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“…In designing of a solid-state plasma S-PIN diode, a critical consideration is whether the carrier concentration within the plasma region can reach 10 18 cm −3 under forward bias voltage. Several simulations and parameter optimizations have been conducted regarding the carrier concentration and I-V characteristics of the S-PIN diode structure [21][22][23][24][25]. Based on the research presented in these studies, it can be conclusively determined that highly resistive floating zone (FZ) silicon wafers are unsuitable for the fabrication of S-PIN diodes.…”

Section: Simulation and Analysis Of S-pin Diodesmentioning

confidence: 99%

Frequency reconfigurable slot antenna utilizing solid-state plasma S-PIN diodes: simulation and experimental analysis

Jin,

Zhou,

Lou

et al. 2024

J. Phys. D: Appl. Phys.

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This article examines the feasibility of integrating solid-state plasma surface p-i-n (S-PIN) diodes into on-chip slots using silicon-on-insulator (SOI) technology. Two categories of solid-state plasma S-PIN diodes are characterized. Simulations analyze the current-voltage (I-V) characteristics, carrier concentrations, potential distribution, and thermal considerations of both single and dual S-PIN diodes, with optimization of their structural parameters and sizes. Experimental tests on fabricated S-PIN diodes of varying sizes with bias lines embedded in the on-chip slots show favorable I-V characteristics for both types of diodes. The measured results closely align with simulation predictions for the diodes' conduction onset voltages. Additionally, a cavity-backed slot antenna (CBSA) is proposed to evaluate and compare radiation characteristics resulting from integrating different types of S-PIN diodes.

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