A review for compact model of graphene field-effect transistors

Lu, Nianduan; Wang, Lingfei; Li, Ling; Liu, Ming

doi:10.1088/1674-1056/26/3/036804

Cited by 35 publications

(27 citation statements)

References 77 publications

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“…One is hopping transport in the ELR method, and the other is the transport from band-like to hopping in the SD method as temperature increases. [20][21][22] Thus, the extracted method is important for analyzing the transport mechanism. Typically, the transport mechanism is based on the dependence of mobility on temperature, which is associated with threshold, as in Equation (3).…”

Section: Resultsmentioning

confidence: 99%

Comparative study on extraction methods of threshold voltage for thin‐film transistors

et al. 2019

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In this work, we proposed three methods on extracting threshold voltage of ploy‐silicon thin‐film transistors, such as, extrapolation of the linear region, transconductance linear extrapolation, and second derivation. Based on these different methods, one can extract various values of threshold voltages, as well as their temperature dependence. In room temperature, the second derivation method is the most appropriate for thin‐film transistors. More remarkably, the different methods show the different temperature dependence of mobility, corresponding to different charge transport mechanisms. That is, hopping dominates the transport mechanism for extrapolation of the linear region method, while it will occur to transform from band‐like to hopping mechanism for the second derivative method.

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Section: Resultsmentioning

confidence: 99%

Comparative study on extraction methods of threshold voltage for thin‐film transistors

et al. 2019

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“…It should be underlined that one of the most important properties of graphene [ 33 – 35 ] and other 2D materials [ 2 , 36 – 41 ] is the strong electric field effect which leads to electrostatically tunable carrier density. The charge carriers can change from electrons to holes with the application of an electrostatic gate.…”

Section: Resultsmentioning

confidence: 99%

“…The gate voltage, V g , induces a sheet carrier concentration approximated by [ 33 ] (ε 0 ε/ we ) V g , where ε 0 and ε are the permittivity of free space and the used dielectric, respectively; e is the electron charge; and w is the thickness of the dielectric. The authors of [ 35 ] provided the theoretical description of the current compact model of graphene field-effect transistors.…”

Section: Resultsmentioning

confidence: 99%

Contactless photomagnetoelectric investigations of 2D semiconductors

Nowak

Jesionek

Solecka

et al. 2018

Beilstein J. Nanotechnol.

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Background: Applications of two-dimensional (2D) materials in electronic devices require the development of appropriate measuring methods for determining their typical semiconductor parameters, i.e., mobility and carrier lifetime. Among these methods, contactless techniques and mobility extraction methods based on field-effect measurements are of great importance. Results: Here we show a contactless method for determining these parameters in 2D semiconductors that is based on the photomagnetoelectric (PME) effect (also known as the photoelectromagnetic effect). We present calculated dependences of the PME magnetic moment, evoked in 2D Corbino configuration, on the magnetic field as well as on the intensity and spatial distribution of illumination. The theoretical predictions agree with the results of the contactless investigations performed on non-suspended single-layer graphene. We use the contactless PME method for determining the dependence of carrier mobility on the concentration of electrons and holes induced by a back-gate voltage. Conclusion: The presented contactless PME method, used in Corbino geometry, is complementary to the mobility extraction methods based on field-effect measurements. It can be used for determining the mobility and diffusion length of carriers in different 2D materials.

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“…Because the IC is consisted of several transistors, if all unit devices would need to run the complicated model of transistor, the system level simulation will beyond computer ability and hence causes non-convergence in calculation. Otherwise, for ensuring the reliability of the simulation, the device model should also be able to accurately describe the physical properties [ 21 ]. Compact model is a critical step in the design cycle of modern IC products [ 22 ].…”

Section: Introductionmentioning

confidence: 99%

“…Accurate and physical compact models are essential for digital and analog circuits. Generally speaking, an excellent compact model should include the following requirements [ 21 , 24 ]:(i) Representing consistently the behavior; (ii) Being symmetrical to reflect the symmetry of TFT structure; (iii) Being analytical, without differentials or integrals; (iv) Being simple and easily derivable; (v) Parameters that can be characterized easily, or even guessed; (vi) Being upgradable and reducible; (vii) Relations can be physically justified; (viii) Being similar form and correspondence to compact models for other TFTs; (ix) Being tunable to inaccurate (or uncertain) experimental data.…”

Section: Introductionmentioning

confidence: 99%

A Review for Compact Model of Thin-Film Transistors (TFTs)

Jiang

et al. 2018

Micromachines

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Thin-film transistors (TFTs) have grown into a huge industry due to their broad applications in display, radio-frequency identification tags (RFID), logical calculation, etc. In order to bridge the gap between the fabrication process and the circuit design, compact model plays an indispensable role in the development and application of TFTs. The purpose of this review is to provide a theoretical description of compact models of TFTs with different active layers, such as polysilicon, amorphous silicon, organic and In-Ga-Zn-O (IGZO) semiconductors. Special attention is paid to the surface-potential-based compact models of silicon-based TFTs. With the understanding of both the charge transport characteristics and the requirement of TFTs in organic and IGZO TFTs, we have proposed the surface-potential-based compact models and the parameter extraction techniques. The proposed models can provide accurate circuit-level performance prediction and RFID circuit design, and pass the Gummel symmetry test (GST). Finally; the outlook on the compact models of TFTs is briefly discussed.

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A review for compact model of graphene field-effect transistors

Cited by 35 publications

References 77 publications

Comparative study on extraction methods of threshold voltage for thin‐film transistors

Comparative study on extraction methods of threshold voltage for thin‐film transistors

Contactless photomagnetoelectric investigations of 2D semiconductors

A Review for Compact Model of Thin-Film Transistors (TFTs)

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