2018
DOI: 10.1155/2018/6793814
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A Review of 5G Power Amplifier Design at cm‐Wave and mm‐Wave Frequencies

Abstract: The 5G wireless revolution presents some dramatic challenges to the design of handsets and communication infrastructures, as 5G targets higher than 10 Gbps download speed using millimeter-wave (mm-Wave) spectrum with multiple-input multiple-output (MIMO) antennas, connecting densely deployed wireless devices for Internet-of-Everything (IoE), and very small latency time for ultrareliable machine type communication, etc. The broadband modulation bandwidth for 5G RF transmitters (i.e., maximum possibly even above… Show more

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Cited by 57 publications
(34 citation statements)
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References 35 publications
(45 reference statements)
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“…Finally, because of the limited output power capability of silicon-based technologies, Gallium Nitride (GaN) or other III-V devices with their unique properties of high sheet charge, high electron mobility and wide bandgap are needed to fulfill the output-power and efficiency requirements [40]. For example, GaN devices can deliver a power density of 3.6 W/mm at 86 GHz in continuous wave operation and a P max of 3.6 Watt at 83 GHz was reported in pulse mode [44]. For an efficient implementation, there is also an ongoing effort to co-integrate GaN or III-V devices with CMOS or BiCMOS [45].…”
Section: A Semiconductor Technology Capabilitiesmentioning
confidence: 99%
“…Finally, because of the limited output power capability of silicon-based technologies, Gallium Nitride (GaN) or other III-V devices with their unique properties of high sheet charge, high electron mobility and wide bandgap are needed to fulfill the output-power and efficiency requirements [40]. For example, GaN devices can deliver a power density of 3.6 W/mm at 86 GHz in continuous wave operation and a P max of 3.6 Watt at 83 GHz was reported in pulse mode [44]. For an efficient implementation, there is also an ongoing effort to co-integrate GaN or III-V devices with CMOS or BiCMOS [45].…”
Section: A Semiconductor Technology Capabilitiesmentioning
confidence: 99%
“…eliminates the signal splitting device and minimizes the wasted energy of the driving power into the peaking path. The Dual-Input DPA transmitter in Figure 9 consists of a DSP and a signal conversion block [62]. The DSP performs the modulation, interpolation, and digital pre-distortion (DPD) on an input signal.…”
Section: Digital Doherty Pamentioning
confidence: 99%
“…Class A has highest linearity but lowest efficiency (50 % ) whereas Class C can offer highest efficiency (theoretically maximum of 100 % ) but is most nonlinear 5 . The output power requirement of power amplifier (PA) will depend on the cell size as discussed in Lie et al 6 …”
Section: Introductionmentioning
confidence: 99%