2017
DOI: 10.1016/j.rser.2016.12.085
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A review of combustion-driven thermoelectric (TE) and thermophotovoltaic (TPV) power systems

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Cited by 81 publications
(22 citation statements)
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“…Figure 5(a) shows the Seebeck coefficient S calculated from ab initio e-ph scattering as a function of carrier concentration n along the c axis direction for n-type KZnP at the temperature (T) from 300 to 1200 K. A negative S means n-type doping, while a positive S represents p-type doping. Obviously, the -S increases with temperature T at the same doping concentration n, and decrease with n at the same T, being consistent with the tendency observed in most of semiconducting thermoelectric materials [4,5]. The -S along c axis direction at n ∼3.2×10 20 cm −3 are in the range of 123.5-195.9 μV K −1 as T increases from 300 to 1200 K. The corresponding thermoelectric parameters along a/b axis direction is available in supporting information.…”
Section: Thermoelectric Performancesupporting
confidence: 89%
See 1 more Smart Citation
“…Figure 5(a) shows the Seebeck coefficient S calculated from ab initio e-ph scattering as a function of carrier concentration n along the c axis direction for n-type KZnP at the temperature (T) from 300 to 1200 K. A negative S means n-type doping, while a positive S represents p-type doping. Obviously, the -S increases with temperature T at the same doping concentration n, and decrease with n at the same T, being consistent with the tendency observed in most of semiconducting thermoelectric materials [4,5]. The -S along c axis direction at n ∼3.2×10 20 cm −3 are in the range of 123.5-195.9 μV K −1 as T increases from 300 to 1200 K. The corresponding thermoelectric parameters along a/b axis direction is available in supporting information.…”
Section: Thermoelectric Performancesupporting
confidence: 89%
“…Over the past decade, research focus on thermoelectric materials has increased drastically because of their capacity of direct and reversible conversion between thermal and electrical energy via the Seebeck and Peltier effect, which provides a promising route to convert waste heat into electricity [1][2][3][4][5]. The conversion efficiency of thermoelectric materials is limited by the dimensionless figure of merit (zT), defined as…”
Section: Introductionmentioning
confidence: 99%
“…Thermionic converters also need to operate at high emitter temperature (generally above 1000 °C) to yield a higher current density as described by the Richardson–Dushman equation. The radiation spectrum of thermophotovoltaic emitter has to be matched with the bandgap of the photovoltaic cell, which generally requires the emitter temperature to be at least 730 °C (1000 K) for practical power density and conversion efficiency. While thermoelectric devices have been used at room and moderate temperatures for refrigeration and waste heat recovery, there is continued push for high‐efficiency thermoelectric materials at high temperature, such as Si–Ge, half‐Heusler, and oxides, for applications in space exploration, high‐temperature waste heat harvesting (e.g., from industrial furnaces), and combustion‐ or solar‐driven generators 14a…”
Section: Introductionmentioning
confidence: 99%
“…Recently, numerous scientists are working in the field of power generation by using inorganic and organic semiconductor materials for their thermo-electric (TE) applications and trying to improve its efficiency [ [2] , [3] , [4] , [5] , [6] , [7] , [8] ]. Mathematically, the TE efficiency ( ) will be presented as mentioned by Eq [ 9 ].…”
Section: Introductionmentioning
confidence: 99%