2022
DOI: 10.1109/tpel.2022.3179234
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A Review of EMI Research in Modular Multilevel Converter for HVDC Applications

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Cited by 28 publications
(13 citation statements)
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“…The high-frequency switching of third-generation semiconductor devices is the main factor required to generate switching EMI, and so the high-frequency modeling of the switching device must accurately simulate its transient characteristics [30]. The method used to model a switching device creates a circuit behavior model and a physical model.…”
Section: Research Status Of Emi Modelingmentioning
confidence: 99%
“…The high-frequency switching of third-generation semiconductor devices is the main factor required to generate switching EMI, and so the high-frequency modeling of the switching device must accurately simulate its transient characteristics [30]. The method used to model a switching device creates a circuit behavior model and a physical model.…”
Section: Research Status Of Emi Modelingmentioning
confidence: 99%
“…Therefore, appropriately configured and reliable FAS must be used to ensure the technical security of CI facilities. When operating FAS in CI facilities with a very high reliability and availability index, we provide an adequate fire safety level [7,[112][113][114]. It is particularly important in public utility CI facilities.…”
Section: Operation Process Analysis For a Selected Fas Operated In Ci...mentioning
confidence: 99%
“…On this basis, each design of a multiobjective optimization would collect ≥ 1.2 G samples of the input current to ensure compliance with conducted emissions standards. Alternatively, double Fourier integral analysis [6] on the grid current i g is possible too, but this approach is always solved numerically and requires a high computation cost when the number of voltage levels increases [7], [8].…”
Section: Introductionmentioning
confidence: 99%