A review of GaN RF devices and power amplifiers for 5G communication applications

Perspectives for III-nitride photonic platforms

“…It can moreover exhibit low switching losses and enables high-frequency operation which is a key for miniaturization [65]. Meanwhile the development of high-linearity power amplifiers is a workhorse for 5G and beyond 5G networks [66,67]. To address these markets, numerous foundries integrating III-nitride materials have been developed.…”

Enhancement of heat dissipation in β-Ga2O3 Schottky diodes through Cu-filled thermal vias: experimental and simulation investigations

“…1 GaN has been successfully utilized for fast chargers and in 5G communication technologies as a high-power amplifier. 2,3 In comparison with WBG materials, b-Ga 2 O 3 , a UWBG material, has a larger bandgap range (4.7-4.9 eV) and theoretically higher breakdown fields (B8 MV cm À1 ). 4 b-Ga 2 O 3 exhibits an exceptionally high Baliga's figure-of-merit (BV 2 /R ON )-which is the performance indicator related to conduction loss-which is equal to 3214, surpassing those of Si (1), SiC (317), and GaN (846).…”

The dawn of ultralong flexible semiconductor fibers

“…Inorganic crystalline semiconductors are foundational to the field of solid-state electronics. 1 , 2 Among ample examples, elemental semiconductors such as silicon (Si) and germanium (Ge) are the cornerstone of the modern electronics industry. Moving into the new era of flexible electronics, the intrinsic rigidity of both Si and Ge has largely limited the applications of these exemplary semiconductors.…”