A review of III-V Tunnel Field Effect Transistors for future ultra low power digital/analog applications

Saravanan, M.; Parthasarathy, Eswaran

doi:10.1016/j.mejo.2021.105102

Cited by 24 publications

(8 citation statements)

References 122 publications

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“…The materials chosen for the source are a mixture of narrow and wide energy band gaps such as SiGe, GaN, GaAs and InAs. These materials are chosen since wide energy bandgap devices help to reduce the ambipolar current whereas narrow bandgap devices exhibit higher I ON 46 , 47 . The simulation parameters are displayed in Fig.…”

Section: Device Description and Simulation Methodologymentioning

confidence: 99%

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

Aishwarya,

Lakshmi

2024

Sci Rep

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Semiconductor devices used in radiation environment are more prone to degradation in device performance. Junctionless Tunnel Field Effect Transistor (JLTFET) is one of the most potential candidates which overcomes the short channel effects and fabrication difficulties. In this work, 20 nm JLTFET is proposed with Silicon in the drain/channel region whereas source uses different materials, Silicon Germanium (SiGe), Gallium Nitride (GaN), Gallium Arsenide (GaAs), Indium Arsenide (InAs). The device performance is examined by subjecting it to heavy ion radiation at a lower and higher dose of linear energy transfer (LET) values. It can be seen that the most sensitive location is the source/channel (S/C) interface for SiGe, GaN and GaAs whereas the drain/channel (D/C) interface for InAs. Further analysis is carried out at these vulnerable regions by matching ION of all materials. The parameters, transient peak current (Ipeak), collected charge (QC), threshold voltage shift (ΔVth) and bipolar gain (β) are extracted using transient simulations. It is observed that for a lower dose of LET, Ipeak of SiGe is 27% lesser than InAs and for higher dose of LET, SiGe shows 56% lesser Ipeak than InAs. SiGe is less sensitive at lower and higher dose of LET due to reduced ΔVth, tunneling and electron density.

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Section: Device Description and Simulation Methodologymentioning

confidence: 99%

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

Aishwarya,

Lakshmi

2024

Sci Rep

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“…Regardless of these advantages, the two main obstacles associated with conventional tunnel FETs are low on-current (I ON ) and ambipolar currents [8][9][10]. Several tunnel FET designs with advanced materials and architectures have been investigated and proposed to alleviate these drawbacks such as silicon on insulator (SOI) TFETs [11], double gate (DG) TFETs [12], Germanium based TFETs [13], III-IV based TFETs [14], multi-gate TFETs [15], vertical TFETs [16], etc. Vertical tunnel FETs are also classified as line tunnelling tunnel FETs since the electron BTBT is in alignment with the gate electric field lines.…”

Section: Introductionmentioning

confidence: 99%

Investigation of negative differential resistance on negative capacitance Germanium source vertical TFET

Vanlalawmpuia

2024

Phys. Scr.

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In this article, a systematic investigation of negative differential resistance (NDR) on a negative capacitance Germanium source vertical TFET (NC-Ge-vTFET) is presented. The implementation and increased ferroelectric (FE) film thickness (tFE) offers a significantly high current ratio, improved subthreshold slope, high transconductance with a very low hysteresis voltage. However, NDR is exhibited and is increasingly prominent at lower gate voltage and higher tFE due to the coupling of the internal gate and drain voltages. NDR is an undesired effect in analog circuits that has to be mitigated. To suppress the impacts of NDR on the device, different approaches are carried out: varying the overlap channel thickness, gate length, drain doping and gate-drain underlap. Circuit analysis is carried out with the implementation of NC-Ge-vTFET as digital inverter. When the gate-drain underlap length is increased from 0 nm to 15 nm, the propagation delay is significantly reduced by 30.98%. Benchmarking of the proposed device has also been carried out. This renders the gate-drain underlapped NC-Ge-vTFET to be a viable candidate for high performance, nanoscale, low power digital applications.

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“…III-V semiconductor nanowires (NWs) have a great potential to improve current optoelectronic devices. For instance, researchers envision that III-V NWs, because of their small size and high electron mobility, may replace current silicon-based transistors in the future [ 1 ]. With a high surface-to-projected-area ratio and tunable bandgaps, vertical arrays of III-V NW solar cells are expected to improve solar panel efficiencies dramatically [ 2 ].…”

Section: Introductionmentioning

confidence: 99%

Pulmonary toxicity and translocation of gallium phosphide nanowires to secondary organs following pulmonary exposure in mice

Berthing,

Lard,

Danielsen

et al. 2023

J Nanobiotechnol

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Background III-V semiconductor nanowires are envisioned as being integrated in optoelectronic devices in the near future. However, the perspective of mass production of these nanowires raises concern for human safety due to their asbestos- and carbon nanotube-like properties, including their high aspect ratio shape. Indeed, III-V nanowires have similar dimensions as Mitsui-7 multi-walled carbon nanotubes, which induce lung cancer by inhalation in rats. It is therefore urgent to investigate the toxicological effects following lung exposure to III-V nanowires prior to their use in industrial production, which entails risk of human exposure. Here, female C57BL/6J mice were exposed to 2, 6, and 18 µg (0.12, 0.35 and 1.1 mg/kg bw) of gallium phosphide (III-V) nanowires (99 nm diameter, 3.7 μm length) by intratracheal instillation and the toxicity was investigated 1, 3, 28 days and 3 months after exposure. Mitsui-7 multi-walled carbon nanotubes and carbon black Printex 90 nanoparticles were used as benchmark nanomaterials. Results Gallium phosphide nanowires induced genotoxicity in bronchoalveolar lavage cells and acute inflammation with eosinophilia observable both in bronchoalveolar lavage and lung tissue (1 and 3 days post-exposure). The inflammatory response was comparable to the response following exposure to Mitsui-7 multi-walled carbon nanotubes at similar dose levels. The nanowires underwent partial dissolution in the lung resulting in thinner nanowires, with an estimated in vivo half-life of 3 months. Despite the partial dissolution, nanowires were detected in lung, liver, spleen, kidney, uterus and brain 3 months after exposure. Conclusion Pulmonary exposure to gallium phosphide nanowires caused similar toxicological effects as the multi-walled carbon nanotube Mitsui-7. Graphical Abstract

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A review of III-V Tunnel Field Effect Transistors for future ultra low power digital/analog applications

Cited by 24 publications

References 122 publications

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

Investigation of negative differential resistance on negative capacitance Germanium source vertical TFET

Pulmonary toxicity and translocation of gallium phosphide nanowires to secondary organs following pulmonary exposure in mice

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