A Review of Reliability in Gate-All-Around Nanosheet Devices

Wang, Miaomiao

doi:10.3390/mi15020269

Cited by 3 publications

(2 citation statements)

References 66 publications

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“…Specifically, there is a paradigm shift in GAA NSFET architecture which isolates both Source/Drain and the device channel from the substrate and the shallow trench isolation. This architecture is fundamentally different from current FinFET and schematically shown in Figure . Experimental evidence shows, that due to complete isolation of the device channel on all sides, GAA NSFETs have superior electrostatic performance compared to conventional FETs, leading to greater operational performance and lower power consumption …”

Section: Introductionmentioning

confidence: 97%

“…This architecture is fundamentally different from current FinFET and schematically shown in Figure 1. 9 Experimental evidence shows, that due to complete isolation of the device channel on all sides, GAA NSFETs have superior electrostatic performance compared to conventional FETs, leading to greater operational performance and lower power consumption. 2 Recent trends in the evolution of SOTA Complementary Metal-Oxide-Semiconductor (CMOS) have led to robust total ionizing dose (TID) and improved dose-rate upset (DRU) understanding of SOTA CMOS Integrated Circuits (IC)- s. 10−12 With the adoption of a new device geometry, the gate and isolation dielectric structure is fundamentally altered, with unknown impact on radiation performance.…”

Section: ■ Introductionmentioning

confidence: 99%

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Displacement Damage, Total Ionizing Dose, and Transient Ionization Effects in Gate-All-Around Field Effect Transistors

Titze,

Belianinov,

Tonigan

et al. 2024

ACS Appl. Electron. Mater.

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Recent developments in state-of-the-art (SOTA) complementary metaloxide-semiconductors (CMOS) integrated circuits (IC) have yielded devices with a robust response to total ionizing dose (TID), and improved dose-rate upset (DRU). However, the Gate-All-Around (GAA) device architecture fundamentally changes the gate and isolation dielectric structures, with unknown impact on TID performance. In addition, the adoption of GAA architecture isolates the active device regions from the underlying silicon substrate in a way that makes these transistors behave like devices based on silicon-on-insulator technology. This dramatically reduces the radiationinduced charge collection volume of the transistor, which may significantly improve the DRU and single event effect response of GAA ICs. As these devices get adopted by industry (announced by Integrated Device Manufacturers), it is paramount to understand their performance and failure mechanisms in space radiation environments before their integration in satellite systems. In this work, we expose GAAs to a variety of surrogate radiation environments, and model relevant space radiation effects. Specifically, we use Li ions to create displacement damage (DD) in these devices. Since using ions creates a significant amount of total ionizing dose (TID), we use an electron beam to test the effects of the TID alone. Lastly, since the linear energy transfer (LET) of Li ions is a small fraction compared to the LET of cosmic rays, we also investigate the response to transient ionization by irradiating GAAs with high-intensity visible light, creating a high density of electron−hole pairs without DD.

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Section: Introductionmentioning

confidence: 97%

Section: ■ Introductionmentioning

confidence: 99%

Displacement Damage, Total Ionizing Dose, and Transient Ionization Effects in Gate-All-Around Field Effect Transistors

Titze,

Belianinov,

Tonigan

et al. 2024

ACS Appl. Electron. Mater.

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Statistical analysis of displacement damage in small devices from neutron and ion irradiation

Wampler,

Vizkelethy,

Titze

2024

Journal of Applied Physics

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Modern semiconductor devices, such as gate-all-around nanosheet field-effect transistors (GAA NS FETs), are smaller than displacement damage cascades from fission neutrons. In this regime, device failure may occur through low-probability single events, rather than by parametric degradation previously seen in larger devices. Here, we present a statistical model that predicts the probability of a damage event in a small device and the probability distribution of the magnitude, i.e., number of displacements within the device, from each event. The model is developed first for neutron irradiation and then for energetic ion irradiation. The model is consistent with results from recent experiments in which lithium-ion irradiation produced stepwise increases in subthreshold current in GAA NS FETs.

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New Label-Free DNA Nanosensor Based on Top-Gated Metal–Ferroelectric–Metal Graphene Nanoribbon on Insulator Field-Effect Transistor: A Quantum Simulation Study

Tamersit,

Kouzou,

Rodriguez

et al. 2024

Nanomaterials

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In this paper, a new label-free DNA nanosensor based on a top-gated (TG) metal–ferroelectric–metal (MFM) graphene nanoribbon field-effect transistor (TG-MFM GNRFET) is proposed through a simulation approach. The DNA sensing principle is founded on the dielectric modulation concept. The computational method employed to evaluate the proposed nanobiosensor relies on the coupled solutions of a rigorous quantum simulation with the Landau–Khalatnikov equation, considering ballistic transport conditions. The investigation analyzes the effects of DNA molecules on nanodevice behavior, encompassing potential distribution, ferroelectric-induced gate voltage amplification, transfer characteristics, subthreshold swing, and current ratio. It has been observed that the feature of ferroelectric-induced gate voltage amplification using the integrated MFM structure can significantly enhance the biosensor’s sensitivity to DNA molecules, whether in terms of threshold voltage shift or drain current variation. Additionally, we propose the current ratio as a sensing metric due to its ability to consider all DNA-induced modulations of electrical parameters, specifically the increase in on-state current and the decrease in off-state current and subthreshold swing. The obtained results indicate that the proposed negative-capacitance GNRFET-based DNA nanosensor could be considered an intriguing option for advanced point-of-care testing.

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A Review of Reliability in Gate-All-Around Nanosheet Devices

Cited by 3 publications

References 66 publications

Displacement Damage, Total Ionizing Dose, and Transient Ionization Effects in Gate-All-Around Field Effect Transistors

Displacement Damage, Total Ionizing Dose, and Transient Ionization Effects in Gate-All-Around Field Effect Transistors

Statistical analysis of displacement damage in small devices from neutron and ion irradiation

New Label-Free DNA Nanosensor Based on Top-Gated Metal–Ferroelectric–Metal Graphene Nanoribbon on Insulator Field-Effect Transistor: A Quantum Simulation Study

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