A Review of Sharp-Switching Band-Modulation Devices

Abstract

This paper reviews the recently-developed class of band-modulation devices, born from the recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body technologies, which have enabled the concept of gate-controlled electrostatic doping. In a lateral PIN diode, two additional gates can construct a reconfigurable PNPN structure with unrivalled sharp-switching capability. We describe the implementation, operation, and various applications of these band-modulation devices. Physical and compact models are presented to explain the output and transfer characteristics in both steady-state and transient modes. Not only can band-modulation devices be used for quasi-vertical current switching, but they also show promise for compact capacitorless memories, electrostatic discharge (ESD) protection, sensing, and reconfigurable circuits, while retaining full compatibility with modern silicon processing and standard room-temperature low-voltage operation.

Subthreshold slope below 60 mV/decade in graphene transistors induced by channel geometry at the wafer-scale

“…Low-power electronic applications targeting a subthreshold slope or swing (SS) below 60 mV/dec in field-effect transistors (FETs) is a hot research topic in line with the worldwide trend of reducing the electric energy consumption. The most studied nanoelectronic devices for low SSs are the tunneling FETs, the ferroelectric FETs, the resistive source FETs nanomechanical relays and band modulation devices, which are all reviewed in [1] and [2]. The discovery of the 2D materials has boosted the research for energy-efficient FETs.…”