“…In recent years, the development of secure, low-carbon, and renewable energy sources and various smart micro-grid systems [ 1 ], power converter-based system compensating devices [ 2 , 3 ], advanced power converters using state-of-the-art wide-bandgap (WBG) switching devices, and digital-integrated intelligent control schemes [ 4 , 5 ] have become very popular research topics in the field of electric power and energy engineering. To best facilitate the above-mentioned technologies, various types of power converters are normally required [ 6 , 7 , 8 , 9 , 10 , 11 ], whose main components are semiconductor power switches and various system control units. To further enhance and optimize the performance of power converters, advanced semiconductor switches based on WBG materials, also known as third-generation semiconductor materials, such as gallium nitride (GaN) and silicon carbide (SiC), are emerging as very promising solutions [ 12 , 13 ].…”