The temperature dependences of monocrystalline silicon (mono-Si), interdigitated back-contact (IBC), passivated emitter and rear cell (PERC), silicon heterojunction (SHJ), and multicrystalline silicon (multi-Si) photovoltaic (PV) modules are estimated. Their characteristics such as temperature coefficients (TCs) for the maximum power (P max ), open-circuit voltage (V oc ), and efficiency are measured. IBC, PERC, SHJ, mono-Si, and multi-Si exhibit TCs at 25°C of P max and efficiency of %0.378, %0.404 to %0.373, %0.279, %0.432 to %0.415, and %0.516%/°C, respectively. IBC, PERC, SHJ, mono-Si, and multi-Si exhibit TCs at 25°C of V oc of %0.267, %0.269 to %0.263, %0.218, %0.312 to %0.306, and %0.334%/°C, respectively. Thus, IBC, PERC, and SHJ show weaker temperature dependences than mono-Si and multi-Si. The efficiencies of IBC, PERC, and SHJ at 25°C are 19.00, 18.81 to 19.25,and 21.40%, whereas those of mono-Si and multi-Si are 15.84 to 17.26 and 15.54%, respectively. Thus, IBC, PERC, and SHJ are more efficient than mono-Si and multi-Si in the temperature range higher than 25°C.