A Review of Synthesis and Novel Transport Properties of Multivalent Manganate Perovskite: Progress, Opportunities, and Challenges

Abstract

Understanding the microstructure of materials and their impact on performance is crucial for new electronic devices design. The strong interaction between multiple degrees of freedom (spin, orbit, charge, and lattice) within perovskite type oxides can generate rich electron phase diagrams. The microscopic modulation of manganese ions electron states in rare earth manganate perovskites is the root of many novel macroscopic quantum behaviors, such as giant magnetoresistance phenomenon. For ABO3 type perovskites, the differences of radii and valence states of A‐site ions are used to regulate the coexistence of B site manganese multivalent states (Mn3+, Mn4+, Mn5+), and its ordered structure in the metastable state will create a new combination of electronic states. The ordered arrangement of the multi‐dimensional space of electronic states can induce unique transport properties. Therefore, the preparation of manganate perovskites will provide strong chemical support to construct new generation quantum devices. This review summarizes the challenges and difficulties on constructing trivalent coexisting metastable phase in manganate perovskites through disproportionation reactions, and discusses the status and potential of designing ideal rectified p‐n junctions taking advantage of this unique structure. Finally, the foregrounds of new quantum states driven by this chemical reaction are prospected.