A review of the 40-year history of the NSREC'S dosimetry and facilities session (1963-2003)

Beezhold, W.; Beutler, D.E.; Garth, J.C.; Griffin, Patrick J.

doi:10.1109/tns.2003.812546

Cited by 3 publications

(2 citation statements)

References 281 publications

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“…Although the carbon-doped aluminum oxide (Al 2 O 3 :C) is now the standard material in a wide range of OSL applications, other materials exist. For TID testing and space dosimetry the SrS:Ce,Sm has been extensively used [45], [46]. The optimum stimulation wavelength for this material lies around 1 μm.…”

Section: Luminescence Dosimetrymentioning

confidence: 99%

Dosimetry Techniques and Radiation Test Facilities for Total Ionizing Dose Testing

Ravotti

2018

IEEE Trans. Nucl. Sci.

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This paper will address dosimetry and monitoring techniques for total ionizing dose (TID) testing of electronics devices. We will first discuss the basic principles of dosimetry, as well as the most common dosimetric quantities and units, used for the determination of the energy deposited in a given medium by ionizing radiation. In Section III, we will give an overview of the available dosimetry techniques for ionizing radiation, along with the basic mechanisms exploited for their operation. In Section IV, we will address issues and factors affecting the dosimetry measurements, as well as we will give some practical "hints" about the selection and use of the presented techniques. Finally, a synthesis of the existing radiation test facilities, focusing on the one for TID testing, will be given in Section V. Their interest, limitations, and some practical aspects involving the organization of radiation test campaigns will also be discussed in this paper.

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Section: Luminescence Dosimetrymentioning

confidence: 99%

Dosimetry Techniques and Radiation Test Facilities for Total Ionizing Dose Testing

Ravotti

2018

IEEE Trans. Nucl. Sci.

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“…Over the past few decades, several studies about the sources of radiation and the basic physics of radiation effects mechanisms [1,2] have facilitated the development of numerous radiation sensors. In the early 1960s and 1970s [3], the first set of basic radiation sensors were developed based on lead (plumbum) zirconium titanate ferroelectric materials [4], strain gauges [5], CaF 2 thermal luminescent dosimeters [6], Si calorimeters [7], etc. These radiation sensors were mainly used for the measurement of absorbed dose and dose-rate related information.…”

Section: Introductionmentioning

confidence: 99%

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

et al. 2021

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This article provides a review of semiconductor based ionising radiation sensors to measure accumulated dose and detect individual strikes of ionising particles. The measurement of ionising radiation (γ-ray, X-ray, high energy UV-ray and heavy ions, etc.) is essential in several critical reliability applications such as medical, aviation, space missions and high energy physics experiments considering safety and quality assurance. In the last few decades, numerous techniques based on semiconductor devices such as diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs) and solid-state photomultipliers (SSPMs), etc., have been reported to estimate the absorbed dose of radiation with sensitivity varying by several orders of magnitude from μGy to MGy. In addition, the mitigation of soft errors in integrated circuits essentially requires detection of charged particle induced transients and digital bit-flips in storage elements. Depending on the particle energies, flux and the application requirements, several sensing solutions such as diodes, static random access memory (SRAM) and NAND flash, etc., are reported in the literature. This article goes through the evolution of radiation dosimeters and particle detectors implemented using semiconductor technologies and summarises the features with emphasis on their underlying principles and applications. In addition, this article performs a comparison of the different methodologies while mentioning their advantages and limitations.

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MOSFET sensitivity dependence on integrated dose from high‐energy photon beams

et al. 2007

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The ability of a commercially available dual bias, dual MOSFET dosimetry system to measure therapeutic doses reproducibly throughout its vendor-defined dose-based lifetime has been evaluated by characterizing its sensitivity variation to integrated/cumulative doses from,high-energy (6 and 15 MV) photon radiotherapy beams. The variation of sensitivity as a function of total integrated dose was studied for three different dose-per-fraction levels; namely, 50, 200, and 1200 cGy/fraction. In standard sensitivity mode (i.e., measurements involving dose-per-fraction levels > or =100 cGy), the response of the MOSFET system to identical irradiations increased with integrated dose for both energies investigated. Dose measurement reproducibility for the low (i.e., 50 cGy) dose fractions was within 2.1% (if the system was calibrated before each in-phantom measurement) and 3.1% [if the system was calibrated prior to first use, with no intermediate calibration(s)]. Similarly, dose measurement reproducibility was between 2.2% and 6.6% for the conventional (i.e., 200 cGy) dose fractions and between 1.8% and 7.9% for escalated (i.e., 1200 cGy) dose fractions. The results of this study suggest that, due to the progressively increasing sensitivity resulting from the dual-MOSFET design, frequent calibrations are required to achieve measurement accuracy of < or =3% (within one standard deviation).

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A review of the 40-year history of the NSREC'S dosimetry and facilities session (1963-2003)

Cited by 3 publications

References 281 publications

Dosimetry Techniques and Radiation Test Facilities for Total Ionizing Dose Testing

Dosimetry Techniques and Radiation Test Facilities for Total Ionizing Dose Testing

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

MOSFET sensitivity dependence on integrated dose from high‐energy photon beams

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