A review of the application of analytical electron microscopy to ion-implanted materials

Bentley, J.

doi:10.1016/0168-583x(86)90002-9

Cited by 6 publications

(1 citation statement)

References 38 publications

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“…[46][47][48] Furthermore, the direct observation of implantation-induced damage and postimplantation microstructural alterations upon thermal annealing have been systematically performed using cross-sectional TEM. [49][50][51] For instance, Mg ion implantation into a GaN epitaxial layer generated point defects and defect complexes, which further developed into extended defects during the post-implantation annealing process. Structural defects such as pyramidal inversion domains and nanoscale extrinsic/intrinsic stacking faults were identified by STEM in Mg-implanted GaN with subsequent annealing.…”

Section: Introductionmentioning

confidence: 99%

Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3

Huang,

Chae,

Johnson

et al. 2023

APL Materials

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Atomic scale details of the formation of point defects and their evolution to phase transformation in silicon (Si) implanted β-Ga2O3 were studied using high resolution scanning transmission electron microscopy (STEM). The effect of Si implantation and the formation of defects was studied as a function of the dose of implanted atoms, and the detailed mechanism of lattice recovery was observed using both in situ and ex situ annealing of the implanted β-Ga2O3. The implantation created nanoscale dark spots in STEM images, which we identified as local γ-Ga2O3 inclusions generated by the relaxation of lattice due to ⟨010⟩ screw dislocations created by the implantation. The number and size of γ-Ga2O3 regions increased as the Si dose increased, and eventually the γ-Ga2O3 crystal phase (with stacking defects) took over the entire implanted volume when the peak Si concentration was over ∼1020 cm−3. Annealing above 1100 °C disintegrates the local γ-Ga2O3 phase and returns the structure to defect-free, single crystal β phase, likely indicating that point defects (such as Si interstitials and cation vacancies) are spatially redistributed by the annealing. However, when the structure is completely transformed to γ-Ga2O3 by the implantation, post-annealing leaves a high concentration of dislocations within the β phase, which relates to the inhomogeneous distribution of Si atoms detected by secondary ion mass spectrometry.

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Section: Introductionmentioning

confidence: 99%

Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3

Huang,

Chae,

Johnson

et al. 2023

APL Materials

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Einführung in die mikrostrukturellen und mikroanalytischen Verfahren der Werkstoff‐Forschung

Dudek

1990

Materialwissenschaft Werkst

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Urn den wachsenden Anforderungen hinsichtlich Festigkeit, Temperatur-und Korrosionsbestandigkeit zu genugen, werden die modernen Werkstoffe zunehmend als "high tech" Produkte mit einer komplizierten Mikrostruktur konzipiert. Dies setzt eine effektive Kontrolle der Mikrostruktur mittels mikrostruktureller und rnikroanalytischer Verfahren voraus.In diesem Bericht wird eine Einfuhrung in die gegenwartig in der Werkstoff-Forschung eingesetzten mikrostrukturellen und mikroanalytischen Verfahren gegeben. Da die GroBe der maBgebenden Strukturelemente der Werkstoffe in einem weiten Bereich von einigen hundert Mikrometern bis zu atomaren Abmessungen variiert, ist die Ortsauflosung ein wesentliches Kriterium fur die Werkstoffuntersuchung.Die mikrostrukturellen und mikroanalytischen Verfahren werden vornehmlich unter dem Gesichtspunkt der Energieauflosung, der quantitativen Analyse und der Ortsauflosung diskutiert. Naher behandelt werden die analytische Transmissions-Elektronen-Mikroskopie (ATEM), die energiedispersive Elektronenstrahl-Mikroanalyse (EDX), die Auger-Elektronen-Spektroskopie (AES) und die Rontgen-Photoelektronen-Spektroskopie (XPS).Am Beispiel der Metallmatrix-Keramikfaser-Verbundwerkstoffe (MMC) wird gezeigt, daB die heute von den mikrostrukturellen und mikroanalytischen Verfahren gelieferten Informationen hinreichend die Mikrostruktur charakterisieren, fur eine erfolgreiche Werkstoffentwicklung aber auch notwendig sind.

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