A review of the electrical characteristics of metal contacts on diamond

Das, K.; Venkatesan, V.; Miyata, Kouji; Dreifus, D. L.; Glass, J. T.

doi:10.1016/0040-6090(92)90494-v

Cited by 65 publications

(24 citation statements)

References 29 publications

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“…III) Sputtered electrodes: a third method is to sputter metals (Ti, Al, Ta, etc) to form ohmic contacts directly on the diamond culet. This technology has been proven to be robust and has worked since the pioneering works of Das [123], Evan [124], and Werner [125]. In practice the electrodes are made with the aid of a mask with fourth slits which cover the diamond culet.…”

Section: Gasket Preparationmentioning

confidence: 99%

A perspective on conventional high-temperature superconductors at high pressure: Methods and materials

et al. 2020

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Two hydrogen-rich materials: H 3 S and LaH 10 , synthesized at megabar pressures have revolutionized the field of superconductivity by providing a first glimpse into the solution for the hundred-year-old problem of room-temperature superconductivity. The mechanism governing these exceptional superconductors is the conventional electron-phonon coupling. Here, we describe recent advances in experimental techniques, superconductivity theory and first-principles computational methods, which made this discovery possible. The aim of this work is to provide an up-to-date compendium of the available results on superconducting hydrides and explain the synergy of different methodologies that led to the extraordinary discoveries in the field. Furthermore, in an attempt to evidence empirical rules governing superconductivity in binary hydrides under pressure, we discuss general trends in electronic structure and chemical bonding. The last part of the Review introduces possible strategies to optimize pressure and transition temperatures in conventional superconducting materials. Directions for future research in areas of theory, computational methods and high-pressure experiments are proposed, in order to advance our understanding of superconductivity.

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Section: Gasket Preparationmentioning

confidence: 99%

A perspective on conventional high-temperature superconductors at high pressure: Methods and materials

et al. 2020

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“…The first method, leading to a structure we refer to here as "TFT1" was fabricated by depositing drain and source contacts directly onto the H-terminated diamond surface before any chemical modification. Drain/source ohmic contacts [21] and the metal interconnects were then patterned using standard ultraviolet photolithography procedures. Drain/source contacts, consisting of 20 nm Ti and 40 nm Au, were deposited by ebeam evaporation.…”

Section: Fabrication Of Chemically Modified Diamond Tft Devicesmentioning

confidence: 99%

“…Moreover, we showed that it was possible to directly detect the changes in charge distribution associated with surface binding events via impedance measurements [19] and in field effect devices [8,21].…”

Section: Introductionmentioning

confidence: 98%

Covalent molecular functionalization of diamond thin-film transistors

Sun

Baker

Butler

et al. 2007

Diamond and Related Materials

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“…[1][2][3][4][5][6][7] Research conducted on TMcoated diamond surfaces suggests that a significant reduction in electron affinity is achievable, [8][9][10][11][12][13] facilitating the use of diamond for cold cathode electron emission applications, 14,15 including the realization of thermotunnel devices. 16 To fully understand the characteristics of TM-diamond interfaces, detailed knowledge of the electronic and structural properties is necessary, for which quantum-chemical simulations are well placed to provide both qualitative and quantitative data.…”

Section: Introductionmentioning

confidence: 99%

Electronic and structural properties of diamond (001) surfaces terminated by selected transition metals

et al. 2012

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The presence of adsorbate species on diamond surfaces, even in small concentrations, strongly influences electrical, chemical, and structural properties. Despite the technological significance, coverage of diamond by transition metals has received relatively little attention. In this paper, we present the results of density functional calculations examining up to a monolayer of selected metals (Cu, Ni, Ti, and V) on the (001) diamond surface. We find that addition of carbide forming species (Ti and V) results in significantly higher adsorption energies at all surface coverages relative to those of the non-carbide-forming species. For monolayer coverage by Cu or Ni, and submonolayer coverage by Ti and V, we find large, negative electron affinities. We propose that based upon the electron affinities and binding energies, metal-terminated (001) diamond surfaces are promising candidates for electron emission device applications. © 2012 American Physical Society

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A review of the electrical characteristics of metal contacts on diamond

Cited by 65 publications

References 29 publications

A perspective on conventional high-temperature superconductors at high pressure: Methods and materials

A perspective on conventional high-temperature superconductors at high pressure: Methods and materials

Covalent molecular functionalization of diamond thin-film transistors

Electronic and structural properties of diamond (001) surfaces terminated by selected transition metals

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