2023
DOI: 10.1007/s10853-023-08232-w
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A review of thermal properties of CVD diamond films

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Cited by 13 publications
(1 citation statement)
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“…Its electrical breakdown threshold is up to 2-10 MV/cm [1][2][3], making it attractive for highvoltage applications, such as field electron transistors [4][5][6][7][8], switching diodes [9][10][11][12][13], highenergy particle trapping [14][15][16][17][18], photoconductive antennas [19][20][21][22] and others. The thermal conductivity of diamond (24 W/cm•K) [23] is even higher than that of copper, which allows it to effectively dissipate heat [24][25][26][27][28]. Recently, diamond heat sinks have demonstrated high efficiency in reducing the temperature of GaN-based transistors [29].…”
Section: Introductionmentioning
confidence: 99%
“…Its electrical breakdown threshold is up to 2-10 MV/cm [1][2][3], making it attractive for highvoltage applications, such as field electron transistors [4][5][6][7][8], switching diodes [9][10][11][12][13], highenergy particle trapping [14][15][16][17][18], photoconductive antennas [19][20][21][22] and others. The thermal conductivity of diamond (24 W/cm•K) [23] is even higher than that of copper, which allows it to effectively dissipate heat [24][25][26][27][28]. Recently, diamond heat sinks have demonstrated high efficiency in reducing the temperature of GaN-based transistors [29].…”
Section: Introductionmentioning
confidence: 99%