A review on III–V core–multishell nanowires: growth, properties, and applications

Royo, Miquel; Luca, Marta De; Rurali, Riccardo; Zardo, Ilaria

doi:10.1088/1361-6463/aa5d8e

Cited by 75 publications

(63 citation statements)

References 228 publications

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“…NWs have been considered as one of the most efficient structures to reduce the short channel effects in the downscaling road of metal oxide-semiconductor FETs, because they can provide a higher gate electrostatic control of the channel compared to the other multi-gate devices [160,161]. In addition, to achieve high device performance at a relatively low-power consumption, new functional materials, such as high mobility Sb-based III-V semiconductors other than traditional Si are developed so that the working voltage can be reduced while maintaining the on current.…”

Section: Transistorsmentioning

confidence: 99%

Recent advances in Sb-based III–V nanowires

et al. 2019

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Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sbbased III-V nanowires (NWs) attracted significant interests in high speed electronics, longwavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effecttransistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.

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Section: Transistorsmentioning

confidence: 99%

Recent advances in Sb-based III–V nanowires

et al. 2019

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“…This increases the capabilities for engineering the strain and, thus, the electronic structure and properties of the heterostructure 19–23 . Unlike quantum-dot heterostructures, where elastic accommodation of large misfit stresses is also possible 24 , the hetero-interface in nanowires can be several micrometres long, allowing for practical use in a wide variety of device concepts, e.g., in photovoltaics, lasers, thermoelectrics and electronics 25 .…”

Section: Introductionmentioning

confidence: 99%

Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch

et al. 2019

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The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal solution in terms of integration, device performance and device economics would be a simple material system with widely tunable bandgap and compatible with the mainstream silicon technology. Here, we show that gallium arsenide nanowires grown epitaxially on silicon substrates exhibit a sizeable reduction of their bandgap by up to 40% when overgrown with lattice-mismatched indium gallium arsenide or indium aluminium arsenide shells. Specifically, we demonstrate that the gallium arsenide core sustains unusually large tensile strain with hydrostatic character and its magnitude can be engineered via the composition and the thickness of the shell. The resulted bandgap reduction renders gallium arsenide nanowires suitable for photonic devices across the near-infrared range, including telecom photonics at 1.3 and potentially 1.55 μm, with the additional possibility of monolithic integration in silicon-CMOS chips.

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“…[18,27]). All-round (homogeneous) gating, as assumed in the discussion of Coulomb blockade, is also currently possible [41,42]. The realization of a finely shaped TI tube thus appears challenging but within current experimental capabilities.…”

Section: Discussionmentioning

confidence: 99%

Theory of magnetotransport in shaped topological insulator nanowires

et al. 2020

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It is demonstrated that shaped topological insulator (TI) nanowires, i.e., such that their cross-section radius varies along the wire length, can be tuned into a number of different transport regimes when immersed in a homogeneous coaxial magnetic field. This is in contrast with widely studied tubular nanowires with constant cross section, and is due to magnetic confinement of Dirac surface carriers. In flat two-dimensional systems, such a confinement requires inhomogeneous magnetic fields, while for shaped nanowires of standard size homogeneous fields of the order of B ∼ 1 T are sufficient. We put recent work [R. Kozlovsky et al., Phys. Rev. Lett. 124, 126804 (2020)] into broader context and extend it to deal with axially symmetric wire geometries with arbitrary radial profile. A dumbbell-shaped TI nanowire is used as a paradigmatic example for transport through a constriction and shown to be tunable into five different transport regimes: (i) conductance steps, (ii) resonant transmission, (iii) current suppression, (iv) Coulomb blockade, and (v) transport through a triple quantum dot. Switching between regimes is achieved by modulating the strength of a coaxial magnetic field and does not require strict axial symmetry of the wire cross section. As such, it should be observable in TI nanowires fabricated with available experimental techniques.

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A review on III–V core–multishell nanowires: growth, properties, and applications

Cited by 75 publications

References 228 publications

Recent advances in Sb-based III–V nanowires

Recent advances in Sb-based III–V nanowires

Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch

Theory of magnetotransport in shaped topological insulator nanowires

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