2024
DOI: 10.1016/j.jece.2024.112538
|View full text |Cite
|
Sign up to set email alerts
|

A review on In2O3 nanostructures for gas sensing applications

Sufaid Shah,
Shahid Hussain,
Syed Taj Ud Din
et al.
Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2024
2024
2025
2025

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 11 publications
(1 citation statement)
references
References 135 publications
0
1
0
Order By: Relevance
“…Although many oxide semiconductors for TFTs have been developed, In 2 O 3 -based materials whose electrical properties change depending on the surrounding atmosphere are suitable for the active channel of such TFT sensors [18,19], and actual sensing of gases such as NO x and H 2 has been reported [20][21][22]. Recently, review papers on In 2 O 3 transistorbased gas sensors have been published overviewing their history, working principles, synthesis, and future applications [23,24]. Paghi et al summarized a gas sensor based on an In 2 O 3 nanowire field-effect transistor, which can serve a large reaction surface compared to a flat and smooth semiconductor device.…”
Section: Introductionmentioning
confidence: 99%
“…Although many oxide semiconductors for TFTs have been developed, In 2 O 3 -based materials whose electrical properties change depending on the surrounding atmosphere are suitable for the active channel of such TFT sensors [18,19], and actual sensing of gases such as NO x and H 2 has been reported [20][21][22]. Recently, review papers on In 2 O 3 transistorbased gas sensors have been published overviewing their history, working principles, synthesis, and future applications [23,24]. Paghi et al summarized a gas sensor based on an In 2 O 3 nanowire field-effect transistor, which can serve a large reaction surface compared to a flat and smooth semiconductor device.…”
Section: Introductionmentioning
confidence: 99%