A review on SOI MOSFET and kink reduction using selective back oxide structure

Abstract

Cl assical Scaling is no longer possible to follow Moore's law. Planar Fully depleted SOl is an advanced technology designed to operate at low power. This paper deals with further scaling of SOl devices, its advantages and reduction of kink effect in SOl MOSFET using SELBOX Structure.Silvaco TCAD tools have been used ,basic mechanism which lead to kink generation are studied in comparison with bulk MOSFET and advantages of SELBOX structures are described for various gap widths.