A review on synthesis of graphene, h-BN and MoS2 for energy storage applications: Recent progress and perspectives

Kumar, Rajesh; Sahoo, Sumanta; Joanni, Ednan; Singh, Rajesh Kumar; Yadav, Ram Manohar; Verma, Rajiv Kumar; Singh, Dinesh; Tan, Wei; Pino, A. Pérez del; Moshkalev, Stanislav; Matsuda, Atsunori

doi:10.1007/s12274-019-2467-8

Cited by 338 publications

(102 citation statements)

References 453 publications

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“…The formation of flaked layer has increased in the composite structure with an increase in the concentration of graphene particles. It can be observed that in this micrograph the grains are well resolved and highly clustered morphology and this type of morphology helps for the charge carriers for easy transportation to the favourable sites in the polymer chain which results improved conductivity in PANI-Gr composites [14,15]. Figure 2 shows the FTIR spectra of pure PANI, pure Gr and 15 wt% of PANI/Gr nanocomposite.…”

Section: Scanning Electron Microscopementioning

confidence: 93%

Synthesis, characterization and Hall-effect studies of highly conductive polyaniline/graphene nanocomposites

Rajyalakshmi

Pasha²,

Khasim

et al. 2020

SN Appl. Sci.

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The objective of this research is to prepare a series of conducting polyaniline/graphene composites by in situ chemical oxidative method through polymerization of aniline in the existence of graphene of various weight percentages. The prepared composites were examined through Fourier transform infrared spectroscopy, X-ray diffraction and scanning electron microscopy respectively. The conductivity and dielectric attributes exhibited composition dependent percolation behavior with enhanced properties for 15 wt% of graphene in polyaniline matrix. The Hall-effect studies were performed in the prepared composites and the investigations confirm that the composites behave as n-type semiconductors. From the data obtained one can envisage remarkable improvement in the charge transport and dielectric properties of the composite at the percolation threshold due to the presence of nano-size additive in the composite. The temperature dependent conductivity in doped composites was increased by five fold in compare to pure PANI. The doping of graphene in PANI matrix, the improved dielectric parameters were achieved. The Hall effect studies were carried out in the prepared composites, the results shows that composites behaves like a n-type semiconductor. Further, the mechanical properties such as tensile stress and tensile strain were carried out in the prepared composites.

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Section: Scanning Electron Microscopementioning

confidence: 93%

Synthesis, characterization and Hall-effect studies of highly conductive polyaniline/graphene nanocomposites

Rajyalakshmi

Pasha²,

Khasim

et al. 2020

SN Appl. Sci.

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“…The weak interchain interactions in the crystal structure exists in two directions, which is quite different from conventional 2D materials with only weak interlayer interaction. [53] The structure anisotropy of Se and Te gives themselves a strong trend toward 1D growth or exfoliation, which brings some difficulties in preparing group-VI 2D materials. [40,41] In addition, there is limited research investigation on the phase transition of other crystal phases of Se and Te with different properties from c-Se and α-Te.…”

Section: Crystal Structures Of Group-vi Elemental 2d Materialsmentioning

confidence: 99%

“…With intensive research efforts, bottom-up methods including vapor deposition and solution synthesis are successful to prepare 2D group-VI materials, although these methods are still underdeveloped compared with the growth of graphene and 2D TMDs. [53,[79][80][81][82] Solution synthesis can prepare large-area, high-quality, free-standing, and single-crystalline thin flakes, which is suitable for high-performance device demonstration. The substrate-free growth also facilitates some applications like flexible electronics.…”

Section: Growth Of 2d Structurementioning

confidence: 99%

Emerging Group‐VI Elemental 2D Materials: Preparations, Properties, and Device Applications

Lin

Wang

Chai

2020

Small

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to micrometers or wafer scale. With different compositions and crystal structures, these 2D materials differ from each other in properties, offering wide range of material choices for diverse functionalities, including electronics, optoelectronics, sensors, energy conversion, and storage. [14-21] As Si transistors approach their scaling limit, the loss of gate electrostatic control on the nanoscale channel and the direct source-to-drain tunneling increase the off-state leakage currents, raise power dissipation, and thus severely degrade the performance of Si transistors. [22-25] Because of this scaling limit of Si transistors, exploration of new channel materials is of vital importance for future nanoelectronics. Due to the ultrathin thickness and dangling-bond-free surface, the emerging 2D materials are promising candidates for continuously downward scaling. [26] The diversity of 2D materials provides broad choices of semimetals (e.g., graphene), insulators (e.g., h-BN), and semiconductors (e.g., TMDs, BP, Se, Te). [8-13] The 2D semiconductors with thickness-dependent bandgaps have been regarded as potential channel materials for replacing Si. [26] The layered nature of 2D semiconductors allows consistent thickness control with atomic precision down to the monolayer limit, leading to enhanced electrostatic control of the gate and further scaling of transistors. Also, the pristine surfaces of 2D semiconductors are free of dangling bonds even down to monolayer limit. The pristine surfaces can give rise to low density of interface trap states and consequently reduce the charge scattering. Taking TMDs as an example, molybdenum disulfide (MoS 2), one of the most widely studied 2D semiconductors is a potential replacement for Si. [27-29] Based on theoretical calculation, 2D MoS 2 is predicted to have a direct source-to-drain tunneling leakage current two orders of magnitude smaller than that of Si. [22] For monolayer MoS 2 , the leakage current will not limit the scaling of transistors down to 1 nm gate length, which is superior to Si with a sub-5 nm scaling limit. [22] With the unique layer nature, 2D semiconductors alleviate the severe short channel effect. Therefore, 2D semiconductors have been regarded as potential options for transistors with ultimate thin channel. After realizing advantages of 2D semiconductors over Si, numerous research studies focus on searching for 2D semiconductors with high carrier mobility and an appropriate bandgap and exploring their usage in future nanoelectronics. Due to the ultrathin thickness and dangling-bond-free surface, 2D materials have been regarded as promising candidates for future nanoelectronics. In recent years, group-VI elemental 2D materials have been rediscovered and found superior in electrical properties (e.g., high carrier mobility, high photoconductivity, and thermoelectric response). The outstanding semiconducting properties of group-VI elemental 2D materials enable device applications including high-performance field-effect transistors and optoelectronic devices. ...

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“…After thermal reduction, rGO and rGO/VC-15% had higher crystallinity, and the diffraction peaks becamme 25.67 • and 26.46 • , corresponding to an interlayer spacing of 0.347 and 0.337 nm. After thermal reduction, the diffraction peaks of rGO and rGO/VC-15% were relatively short and wide [36,37], and the diffraction peaks became 25.67 • and 26.46 • , corresponding to an interlayer spacing of 0.347 and 0.337 nm. This is because GO is only carbonized at a mild thermal reduction temperature of 800 • C, and the lower thermal reduction temperature was not sufficient to achieve graphitization.…”

Section: Morphology and Structural Characterizationsmentioning

confidence: 99%

Carbonized Dehydroascorbic Acid: Aim for Targeted Repair of Graphene Defects and Bridge Connection of Graphene Sheets with Small Size

Lai

et al. 2020

Nanomaterials

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The thermal dissipation issue of electronics devices becomes increasingly prominent as they evolve to smaller sizes and more complicated structures. Therefore, the development of materials with excellent heat conduction properties and light weight turns out to be an urgent demand to solve the heat transfer problem of electronics devices with high performance. For this purpose, we put forward an innovative strategy that carbonized dehydroascorbic acid (CDA) be applied to graphene layers for the targeted repair of defects among them and bridge connection of the layers to produce graphene heat conduction materials with excellent properties. Firstly, hydrogen bonds formed from dehydroascorbic acid (DHAA, products of the oxidation of vitamin C) and each of ketone, carboxyl, and oxhydryl groups on graphene layers were absorbed at targeted locations where oxidation graphene produces defects, then targeted repair was conducted for those defects to be filled and for the graphene layers of a small size to grow into large sheet materials with improved continuity by CDA generated in thermally pressing reduction reaction at 800 °C. In our investigation, the planar thermal conductivity of rGO/VC membrane reached 1031.9 ± 10.2 Wm−1K−1, while the added mass content of vitamin C (VC) was 15%. Being a reference, the planar thermal conductivity of primitive graphene membrane was only 610.7 ± 11.7 Wm−1K−1.

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A review on synthesis of graphene, h-BN and MoS2 for energy storage applications: Recent progress and perspectives

Cited by 338 publications

References 453 publications

Synthesis, characterization and Hall-effect studies of highly conductive polyaniline/graphene nanocomposites

Synthesis, characterization and Hall-effect studies of highly conductive polyaniline/graphene nanocomposites

Emerging Group‐VI Elemental 2D Materials: Preparations, Properties, and Device Applications

Carbonized Dehydroascorbic Acid: Aim for Targeted Repair of Graphene Defects and Bridge Connection of Graphene Sheets with Small Size

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