A review: research progress of chemical–mechanical polishing slurry for copper interconnection of integrated circuits

Yan, Han; Niu, Xinhuan; Qu, Minghui; Luo, Fu; Zhan, Ni; Liu, Jianghao; Zou, Yida

doi:10.1007/s00170-022-10775-2

Int J Adv Manuf Technol

2023

DOI: 10.1007/s00170-022-10775-2

|View full text |Cite

A review: research progress of chemical–mechanical polishing slurry for copper interconnection of integrated circuits

Han Yan

Xinhuan Niu

Minghui Qu

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2023

2025

Publication Types

Select...

Article6

Relationship

Self Cite0

Independent6

Authors

Journals

Cited by 19 publications

(1 citation statement)

References 135 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Chemical mechanical polishing (CMP), with a unique synergy of chemical and mechanical effects, has been widely used in optical 1 and semiconductor manufacturing industries, 2 such as laser components, 3 photoelectric detection window, 4 semiconductor substrates, 5 and interconnect structure of integrated circuits 6 because of its excellent capacities in obtaining ultra-smooth surface 7 as well as achieving global and local planarization. 8 In a typical CMP process, a workpiece is rotated around its axis and pressed facedown against a rotating polishing pad.…”

mentioning

confidence: 99%

Effect of Viscoelastic Characteristics on the Real Contact Area of Polishing Pad Surface

Hou,

Di,

Wang

et al. 2024

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Real contact area (RCA) between polishing pad and workpiece surface is one of the most important parameters indicating the mechanical action strength of chemical mechanical polishing (CMP), which has a dominated effect on the material removal. However, the effect of pad viscoelastic characteristics on RCA is not clear. In this study, a contact status measurement device that can apply cyclic load and record contact images is developed to study the viscoelastic behavior of the pad and its influence on RCA. The results show that when the pad undergoes cyclic compression load during CMP, the pad asperity layer gradually accumulates viscoelastic deformation and the RCA increases obviously, which can be mostly recovered after a long time. In particular, the accumulation and recovery of viscoelastic deformation lead to a significant change of the relationship between RCA and pressure, from linear to nonlinear and then to linear. Furthermore, an RCA model is established based on the viscoelastic constitutive model of pad and the mathematical relationship between RCA and pad deformation to explain the influence of pad viscoelastic behavior on RCA. This study is expected to provide new insights into RCA, and to give support for predictive control of the material removal during CMP.

show abstract

mentioning

confidence: 99%

Effect of Viscoelastic Characteristics on the Real Contact Area of Polishing Pad Surface

Hou,

Di,

Wang

et al. 2024

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

Corrosion inhibition threshold effect of 1,2,4-triazole in alkaline chemical mechanical polishing of copper: Investigations using synchrotron radiation microinfrared

Dai,

Yan,

Zhang

et al. 2024

Ionics

View full text Add to dashboard Cite

Two material removal modes in chemical mechanical polishing: mechanical plowing vs. chemical bonding

Wu,

Jiang,

et al. 2023

Friction

View full text Add to dashboard Cite

With the rapid development of semiconductors, the number of materials needed to be polished sharply increases. The material properties vary significantly, posing challenges to chemical mechanical polishing (CMP). Accordingly, the study aimed to classify the material removal mechanism. Based on the CMP and atomic force microscopy results, the six representative metals can be preliminarily classified into two groups, presumably due to different material removal modes. From the tribology perspective, the first group of Cu, Co, and Ni may mainly rely on the mechanical plowing effect. After adding H2O2, corrosion can be first enhanced and then suppressed, affecting the surface mechanical strength. Consequently, the material removal rate (MRR) and the surface roughness increase and decrease. By comparison, the second group of Ta, Ru, and Ti may primarily depend on the chemical bonding effect. Adding H2O2 can promote oxidation, increasing interfacial chemical bonds. Therefore, the MRR increases, and the surface roughness decreases and levels off. In addition, CMP can be regulated by tuning the synergistic effect of oxidation, complexation, and dissolution for mechanical plowing, while tuning the synergistic effect of oxidation and ionic strength for chemical bonding. The findings provide mechanistic insight into the material removal mechanism in CMP.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

A review: research progress of chemical–mechanical polishing slurry for copper interconnection of integrated circuits

Cited by 19 publications

References 135 publications

Effect of Viscoelastic Characteristics on the Real Contact Area of Polishing Pad Surface

Effect of Viscoelastic Characteristics on the Real Contact Area of Polishing Pad Surface

Corrosion inhibition threshold effect of 1,2,4-triazole in alkaline chemical mechanical polishing of copper: Investigations using synchrotron radiation microinfrared

Two material removal modes in chemical mechanical polishing: mechanical plowing vs. chemical bonding

Contact Info

Product

Resources

About