A robust k∼2.3 SiCOH low-k film formed by porogen removal with UV-cure

Kemeling, Nathan; Matsushita, Kiyohiro; Tsuji, Naoto; Kagami, Ken-ichi; Kato, Manabu; Kaneko, Shinya; Sprey, Hessel; Roest, David De; Kobayashi, Nozomu

doi:10.1016/j.mee.2007.05.025

Cited by 31 publications

(23 citation statements)

References 3 publications

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“…The differences between the monochromatic and the broadband are largely due to wavelength-dependent absorption in which the absorption coefficient of the light-absorbing layer increases precipitously with UV light with a shorter wavelength ͑Ͻ200 nm͒. 13 An empirical relationship of the light absorption and the material properties through which the light is propagating is given by Beer-Lambert law…”

Section: Resultsmentioning

confidence: 99%

Tuning depth profiles of organosilicate films with ultraviolet curing

Kim

Tsuji²,

Matsushita³

et al. 2008

Journal of Applied Physics

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This study demonstrates that ultraviolet ͑UV͒ radiation curing can control depth profiles of organosilicate films. Striking differences between the effects of monochromatic and broadband UV irradiation were observed. For the same as-deposited organosilicate film and cure duration, monochromatic radiation has a greater impact on film structure, elastic modulus, and fracture resistance, but also results in a greater degree of depth dependent properties. Oscillating elastic modulus through the film thickness was observed with force modulation atomic force microscopy. We present a new standing wave model that accurately predicts the resulting depth dependent stiffness variations considering changes in film shrinkage and refractive index in terms of curing time, and can further be used to account for initial film thickness dependence of UV curing and film absorption. Promising applications of the depth dependent UV curing to produce multifunctional ultralow-k layers with a single postdeposition curing process are discussed.

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Section: Resultsmentioning

confidence: 99%

Tuning depth profiles of organosilicate films with ultraviolet curing

Kim

Tsuji²,

Matsushita³

et al. 2008

Journal of Applied Physics

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“…After thermal annealing, the k ‐values were then reduced, and the lowest k ‐value was found to be in the region of 1.8 for sample C. It is thought that the unstable fragments, e.g ., hydrocarbon porogen, were removed in the film due to thermal annealing, resulting in the porosity of SiCOH films as reported in Ref. , where the removed porogen in the SiCOH film led to the decrease of dielectric constants.…”

Section: Resultsmentioning

confidence: 75%

Hydrocarbon Incorporation Effect on the Electrical Properties of Low Dielectric Constant SiCOH Films Deposited with Tetrakis(trimethylsilyloxy)silane and Cyclohexane Precursors

Kim

Kang

Seo

et al. 2015

Bulletin Korean Chem Soc

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SiCOH films containing hydrocarbon porogens were prepared using a plasma enhanced chemical vapor deposition system. Their chemical and electrical properties were characterized with various hydrocarbon incorporations. The hydrocarbon incorporation of SiCOH films was estimated using Fourier transform infrared absorption spectra by calculating the peak ratio of hydrocarbon related peaks and Si-O peaks. Thereafter, changes seen in current-voltage (I-V) curves were explained by defect states in the interface of films related with the variation of hydrocarbon incorporation by deposition and/or by postdeposition annealing.

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“…Furthermore, the highest increase in the k value is occurred in the low-k_2 (porogen-containing low-k film without UV curing). The UV irradiation on the low-k dielectrics not only removes the porogen to form pores but also strengthens the bonding strength of the low-k dielectrics Plasma Damage on Low-k Dielectric Materials http://dx.doi.org/10.5772/intechopen.79494 [53]. Therefore, the resistance to O 2 plasma damage can be reinforced.…”

Section: Low-k Dielectric Dependencementioning

confidence: 99%

Plasma Damage on Low-k Dielectric Materials

Cheng¹,

Lee²,

Haung³

2019

Plasma Science and Technology - Basic Fundamentals and Modern Applications

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Low dielectric constant (low-k) materials as an interconnecting insulator in integrated circuits are essential for resistance-capacitance (RC) time delay reduction. Plasma technology is widely used for the fabrication of the interconnects, such as dielectric etching, resisting ashing or stripping, barrier metal deposition, and surface treatment. During these processes, low-k dielectric materials may be exposed to the plasma environments. The generated reactive species from the plasma react with the low-k dielectric materials. The reaction involves physical and chemical effects, causing degradations for lowk dielectric materials. This is called "plasma damage" on low-k dielectric materials. Therefore, this chapter is an attempt to provide an overview of plasma damage on the low-k dielectric materials.

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A robust k∼2.3 SiCOH low-k film formed by porogen removal with UV-cure

Cited by 31 publications

References 3 publications

Tuning depth profiles of organosilicate films with ultraviolet curing

Tuning depth profiles of organosilicate films with ultraviolet curing

Hydrocarbon Incorporation Effect on the Electrical Properties of Low Dielectric Constant SiCOH Films Deposited with Tetrakis(trimethylsilyloxy)silane and Cyclohexane Precursors

Plasma Damage on Low-k Dielectric Materials

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