A route to low temperature growth of single crystal GaN on sapphire

Motamedi, Pouyan; Dalili, Neda; Cadien, Ken

doi:10.1039/c5tc01556a

Cited by 45 publications

(45 citation statements)

References 74 publications

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“…High temperatures of 800-1000 o C were traditionally and are currently used for GaN growth in both MBE and MOCVD to mitigate the energy barriers to precursor adsorption and surface adatom migration [56]. Such high growth temperatures, however, prevent the incorporation of substantial amounts of highly mismatched isovalent elements in the crystal lattice of GaN.…”

Section: Low Temperature Mbementioning

confidence: 99%

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Sarney

Новиков

et al. 2016

Semicond. Sci. Technol.

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Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of the alloys deviate significantly from an interpolation scheme based on small deviations from the virtual crystal approximation. Most of the HMAs were only studied in a dilute composition limit. Recent advances in understanding of the semiconductor synthesis processes allowed growth of thin films of HMAs under non-equilibrium conditions. Thus reducing the growth temperature allowed synthesis of group III-N-V HMAs over almost the entire composition range. This paper focuses on the GaNxSb1-x HMA which has been suggested as a potential material for solar water dissociation devices. Here we review our recent work on the synthesis, structural and optical characterization of GaN1-xSbx HMA. Theoretical modeling studies on its electronic structure based on the band anticrossing (BAC) model are also reviewed. In particular we discuss the effects of growth temperature, Ga flux and Sb flux on the incorporation of Sb, film microstructure and optical properties of the alloys. Results obtained from two separate MBE growths are directly compared. Our work demonstrates that a large range of direct bandgap energies from 3.4 eV to below 1.0 eV can be achieved for this alloy grown at low temperature. We show that the electronic band structure of GaN1-xSbx HMA over the entire composition range is well described by a modified the BAC model which includes the dependence of the host matrix band edges as well as the BAC model coupling parameters on composition. We emphasize that the modified BAC model of the electronic band structure developed for the full composition of GaNxSb1-x is general and is applicable to any HMA.

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Section: Low Temperature Mbementioning

confidence: 99%

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Sarney

Новиков

et al. 2016

Semicond. Sci. Technol.

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“…Earlier, followed by the synthesis of single-walled nanotubes and thick-wall tubular forms of GaN and AlN, [38][39][40] ultrathin GaN and AlN layer(s), or nanosheets, as well as their composites' several forms were grown on specific substrates such as sapphire, Si (111), 6H-SiC(0001), InGaN, single-walled carbon nanotube/graphene, etc. [41][42][43][44][45][46] Regarding the synthesis of the aforementioned h-AlN, Tsipas et al 47 have demonstrated the epitaxial growth of ultrathin hexagonal form of AlN on single crystal Ag (111) in 2013. They prepared AlN films by plasma assisted molecular beam epitaxy on Ag (111) substrate of single crystals [see Fig.…”

mentioning

confidence: 99%

Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: A first-principles perspective to recent synthesis

Kecik

Önen

Konuk

et al. 2018

Applied Physics Reviews

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Potential applications of bulk GaN and AlN crystals have made possible single and multilayer allotropes of these III-V compounds to be a focus of interest recently. As of 2005, the theoretical studies have predicted that GaN and AlN can form two-dimensional (2D) stable, single-layer (SL) structures being wide band gap semiconductors and showing electronic and optical properties different from those of their bulk parents. Research on these 2D structures have gained importance with recent experimental studies achieving the growth of ultrathin 2D GaN and AlN on substrates. It is expected that these two materials will open an active field of research like graphene, silicene, and transition metal dichalcogenides. This topical review aims at the evaluation of previous experimental and theoretical works until 2018 in order to provide input for further research attempts in this field. To this end, starting from three-dimensional (3D) GaN and AlN crystals, we review 2D SL and multilayer (ML) structures, which were predicted to be stable in free-standing states. These are planar hexagonal (or honeycomb), tetragonal, and square-octagon structures. First, we discuss earlier results on dynamical and thermal stability of these SL structures, as well as the predicted mechanical properties. Next, their electronic and optical properties with and without the effect of strain are reviewed and compared with those of the 3D parent crystals. The formation of multilayers, hence prediction of new periodic layered structures and also tuning their physical properties with the number of layers are other critical subjects that have been actively studied and discussed here. In particular, an extensive analysis pertaining to the nature of perpendicular interlayer bonds causing planar GaN and AlN to buckle is presented. In view of the fact that SL GaN and AlN can be fabricated only on a substrate, the question of how the properties of free-standing, SL structures are affected if they are grown on a substrate is addressed. We also examine recent works treating the composite structures of GaN and AlN joined commensurately along their zigzag and armchair edges and forming heterostructures, d-doping, single, and multiple quantum wells, as well as core/ shell structures. Finally, outlooks and possible new research directions are briefly discussed. Published by AIP Publishing. https://doi.

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“…11 There are only a few recent reports on the growth of GaN films using atomic layer deposition at low temperatures (<300 C) with improved crystalline quality and electrical properties. 6,12,13 In these reports, PA-ALD of GaN using trimethylgallium, 12 triethylgallium (TEG), 6,13 and N 2 /H 2 plasma as the precursors were reported at relatively low substrate temperatures. However, yet there is no report on the effect of the substrate temperature on the structural and optical properties of GaN films grown by using hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD).…”

Section: Introductionmentioning

confidence: 99%

“…1,2 Although high-quality GaN films grown by metal-organic chemical vapor deposition 3,4 and molecular beam epitaxy 5 at high growth temperatures (>800 C), which is necessary to increase the cracking efficiency of ammonia (NH 3 ) and mobility of precursor species at the substrate surface, 6 high growth temperatures limit the integration of GaN-based optoelectronic devices with Si CMOS technology as well as not being suitable for deposition of GaN on flexible polymeric substrates. Moreover, the integration of narrow band gap (In-rich) with wide band gap (Ga-rich) III-nitride layers is not possible due to the low vapor pressure and disassociation temperature of InN.…”

Section: Introductionmentioning

confidence: 99%

Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

Alevli¹,

Gungor²,

Haider³

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Gallium nitride films were grown by hollow cathode plasma-assisted atomic layer deposition using triethylgallium and N2/H2 plasma. An optimized recipe for GaN film was developed, and the effect of substrate temperature was studied in both self-limiting growth window and thermal decomposition-limited growth region. With increased substrate temperature, film crystallinity improved, and the optical band edge decreased from 3.60 to 3.52 eV. The refractive index and reflectivity in Reststrahlen band increased with the substrate temperature. Compressive strain is observed for both samples, and the surface roughness is observed to increase with the substrate temperature. Despite these temperature dependent material properties, the chemical composition, E1(TO), phonon position, and crystalline phases present in the GaN film were relatively independent from growth temperature. © 2015 American Vacuum Society

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A route to low temperature growth of single crystal GaN on sapphire

Cited by 45 publications

References 74 publications

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: A first-principles perspective to recent synthesis

Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

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A route to low temperature growth of single crystal GaN on sapphire

Cited by 45 publications

References 74 publications

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: A first-principles perspective to recent synthesis

Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

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Product

Resources

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Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties