A ruggedly packaged D-Band GaAs Gunn diode with hot electron injection suitable for volume manufacture

Farrington, N.; Norton, P. R.; Carr, M.; Sly, J.; Missous, M.

doi:10.1109/mwsym.2008.4633158

Cited by 7 publications

(6 citation statements)

References 9 publications

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“…The timedomain response obtained and given in figure 9b, shows a fundamental free-running frequency of approximately 66 GHz. The fabricated device has been shown to provide around 130mW at 62GHz operating in fundamental mode, and 40mW at 121.5 GHz in a second harmonic oscillator: the latter is the highest reported power for a GaAs device at this frequency 23 . The results of the time-domain simulations are therefore inline with those expected from measured results.…”

Section: 1µm Transit Region Device Results (Vmbe1950)mentioning

confidence: 93%

Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in terahertz frequency multiplication chains

et al. 2010

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Simulated RF time-domain characteristics for advanced Gunn diodes with hot electron injection and sub-micron transit region lengths for use at frequencies over 100GHz are reported. The physical models used have been developed in SILVACO and are compared to measured results. The devices measured were originally fabricated to investigate the feasibility of GaAs Gunn diode oscillators capable of operating at D-band frequencies and ultimately intended for use in high power (multi-mW) Terahertz sources (~0.6THz) when used in conjunction with novel Schottky diode frequency multiplier technology. The device models created using SILVACO are described and the DC and time-domain results presented. The simulations were used to determine the shortest transit region length capable of producing sustained oscillation. The operation of resonant disk second harmonic Gunn diode oscillators is also discussed and accurate electromagnetic models created using Ansoft High Frequency Structure Simulator presented. Novel methods for combining small-signal frequency-domain electromagnetic simulations with time-domain device simulations in order to account for the significant interactions between the diode and oscillator circuit are described.

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Section: 1µm Transit Region Device Results (Vmbe1950)mentioning

confidence: 93%

Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in terahertz frequency multiplication chains

et al. 2010

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“…The output power remained fairly constant with the exception of an 8 dB dip occurring at around 3.1V. We attribute the dip in power to the external device layout structure that unlike a conventional vertical Gunn diode did not have a tuned cavity [5]. Therefore, at 3.1 V, the high power loss, as shown in Figure 5, may be reduced with an optimized device layout geometry and a planar matching network on the chip.…”

Section: Resultsmentioning

confidence: 99%

“…Slight power improvement may be obtained by lapping the substrate thickness down to 200 μm and metalizing the backside of the substrate to improve heat conductivity. Nevertheless, the DC‐to‐RF conversion efficiency remains far lower compared to conventional vertical Gunn diodes [5].…”

Section: Introductionmentioning

confidence: 99%

A 218‐GHz second‐harmonic multiquantum well GaAs‐based planar Gunn diodes

Khalid

Papageorgiou

et al. 2013

Micro & Optical Tech Letters

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We present a multiquantum‐well channel GaAs‐based planar Gunn diode. By introducing extra channels, the output RF power has been significantly improved compared to single‐channel GaAs‐based planar Gunn diodes. For a 1.14 μm length and 60 μm wide device, the highest power achieved was approximately −4 dBm operating in fundamental mode at 109 GHz, and −26.6 dBm at its second harmonic at 218 GHz. The DC‐to‐RF conversion efficiency was ∼0.3% for the fundamental mode of oscillation. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:686–688, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27393

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“…20(a) at the interface from the AlGaAs layer to the GaAs region. The AlGaAs layer is often separated from the heavily doped GaAs layers by very thin (< 10 nm) undoped GaAs spacer layers (50,51). At the proper bias level, "hot" electrons are now ballistically launched into the active region from an approximately 200-meV-high step in the conduction band.…”

Section: Injection Over a Homo-or Heterojunction Barriermentioning

confidence: 99%

“…As a characteristic of fundamental-mode operation (34), a wide tuning bandwidth of more than 6 GHz was observed by simply adjusting the position of the back short (33). In a second-harmonic mode, Gunn devices with a graded-gap injector yielded RF powers of 83 mW at 77 GHz (50) and 40 mW at 122 GHz (51).…”

Section: Injection Over a Homo-or Heterojunction Barriermentioning

confidence: 99%

Gunn or Transferred‐Electron Devices

Eisele

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Transferred‐electron devices are the only microwave devices whose operation is solely based on the bulk‐material properties of semiconductors such as GaAs or InP. These devices are mainly employed in low‐noise medium‐power oscillators up to high millimeter‐wave frequencies. James B. Gunn was the first scientist to observe the underlying physical phenomenon in an experiment and, therefore, these devices are often referred to as Gunn devices. This chapter describes the principles of operation, basic fabrication technologies, and common oscillator circuits for them. Different device structures for performance optimization, optimization procedures, and simulation tools are discussed. The chapter also summarizes the current state of the art of Gunn devices and the outlook covers the prospects of more recent device structures and material systems.

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A ruggedly packaged D-Band GaAs Gunn diode with hot electron injection suitable for volume manufacture

Cited by 7 publications

References 9 publications

Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in terahertz frequency multiplication chains

Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in terahertz frequency multiplication chains

A 218‐GHz second‐harmonic multiquantum well GaAs‐based planar Gunn diodes

Gunn or Transferred‐Electron Devices

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