A scalable anti-sticking layer process via controlled evaporation

Steinberg, Christian; Dhima, Khalid; Blenskens, Daniel; Mayer, André; Wang, Si; Papenheim, Marc; Scheer, Hella-Christin; Zajadacz, Joachim; Zimmer, Klaus

doi:10.1016/j.mee.2014.04.002

Cited by 34 publications

(18 citation statements)

References 8 publications

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“…1(B) c), a hard stamp from Si or Ormostamp was used. The stamp was provided with an anti-sticking layer [14,28]. The imprint time and temperature were set to 5 min and 95°C.…”

Section: Methodsmentioning

confidence: 99%

“…At this wavelength the photon energy is capable of breaking bonds up to energies of 7.2 eV but avoids strong absorption by ozone at 254 nm which is typical with UV-ozone treatment in a commercial UV-ozone cleaner. Excimer radiation at 172 nm can be used to clean surfaces and to provide OH-groups as binding sites for an anti-sticking layer [14] or to provide PDMS with a hardened, SiOx-like surface [15,16]. Furthermore, in absence of oxygen a VUV treatment of polymers can simply provide a cross-linked surface layer [17,18].…”

Section: Introductionmentioning

confidence: 99%

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Complex 3D structures via hybrid processing of SU-8

Steinberg

Papenheim

Wang

et al. 2016

Microelectronic Engineering

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“…1(B) c), a hard stamp from Si or Ormostamp was used. The stamp was provided with an anti-sticking layer [14,28]. The imprint time and temperature were set to 5 min and 95°C.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Complex 3D structures via hybrid processing of SU-8

Steinberg

Papenheim

Wang

et al. 2016

Microelectronic Engineering

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“…The stamps used for thermal imprint were un-patterned Si samples coated with a fluorine-based anti-sticking layer (ASL) [22] with a low surface energy of about 13 mJ/m 2 .…”

Section: Experimental Methodsmentioning

confidence: 99%

Characterization of semicrystalline polymers after nanoimprint by spectroscopic ellipsometry

et al. 2016

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Semicrystalline Reg-P3HT (regio-regular poly-3-hexylthiophene) is a promising material for organic electronics. It features relatively high charge mobility and enables easy preparation because of its solubility. Due to its high optical and electrical anisotropy, the size, number and orientation of the ordered domains are important for applications. To control these properties without limitation from crystalline domains existing after spin coating, thermal nanoimprint is performed beyond the melting point. The state of the art of measurement to analyze the complex morphology is X-ray diffraction (XRD). We address an alternative measurement method to characterize the material by its optical properties, spectroscopic ellipsometry. It provides information on the degree of order from the typical fingerprint absorption spectrum. In addition, when the material is modeled as a uniaxial layer, an anisotropy factor can be derived. The results obtained from spectroscopic ellipsometry are in accordance with those from XRD. In particular, spectroscopic ellipsometry is able to distinguish between order along the backbone and order in p-p stacking direction, which is important with respect to conductivity.

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“…For the second replication the Ormostamp TM has to be provided with ASL. We used either OPTOOL TM (Daikin) for the ASL [9] or FOTS (fluoroctatrichlorsilane, Sigma Aldrich) [10].…”

Section: Second Generation Replica Moldmentioning

confidence: 99%

“…The process finally used follows [10] with the exception that the UV(Ultra violet)-ozone irradiation (172 nm) was reduced substantially, to 5 sec only. This is important in order to minimize any CD (critical dimension)-loss, as documented in Fig.…”

Section: Second Generation Replica Moldmentioning

confidence: 99%